| Patent Number |
Title Of Patent |
Date Issued |
| 6029679 |
Semiconductor cleaning and production methods using a film repulsing fine particle contaminants |
February 29, 2000 |
| By employing a cleaning method wherein a substrate such as Si wafer is covered with a film having electrostatic repulsive force or a substance capable of controlling a zeta potential so as to prevent or remarkably reduce adhesion of fine particles present in a cleaning solution or et |
| 5979475 |
Specimen holding method and fluid treatment method of specimen surface and systems therefor |
November 9, 1999 |
| A highly clean fluid treatment system having a small system volume is provided by using a Bernoulli holder to accomplish stable holding of a specimen in a simple configuration. A holder having a specimen hold face formed almost the same as a specimen or having a Bernoulli effect prod |
| 5747387 |
Removal method of organic matter and system for the same |
May 5, 1998 |
| According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with |
| 5196702 |
Photo-sensor and method for operating the same |
March 23, 1993 |
| An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed be |
| 4982095 |
Multi-element type radiation detector |
January 1, 1991 |
| This invention relates to a multi-element type radiation detector for an X-ray CT scanner system wherein a plurality of scintillator blocks that are isolated either optically or radiation-wise from one another are arranged integrally, and a photo-diode consisting of an amorphous silicon |
| 4937454 |
Radiation detector |
June 26, 1990 |
| In a radiation detector having a scintillator and a photodiode in combination, an amorphous silicon diode of a refractive index of 3.5 or below is used for a photodector to have a decreased junction capacitance. This shifts the spectral sensitivity characteristic of the photodetector |
| 4721535 |
Solar cell |
January 26, 1988 |
| A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to |
| 4642412 |
Photo-electronic conversion apparatus with light pattern discriminator |
February 10, 1987 |
| A plurality of photovoltaic devices (e.g., solar cells) connect with each other and form a photo-electric conversion apparatus. The photovoltaic devices concerned are so connected with each other that when a given pattern of light is irradiated upon the photo-electric conversion appa |
| 4533831 |
Non-mass-analyzed ion implantation |
August 6, 1985 |
| A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scann |
