| Patent Number |
Title Of Patent |
Date Issued |
| 7404910 |
Etching solution, etched article and method for etched article |
July 29, 2008 |
| An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25.degree. C. |
| 7052627 |
Etching solution, etched article and method for etched article |
May 30, 2006 |
| An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 .ANG./min or less at 25.degree. C., and an etching rate ratio: etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or |
| 6831048 |
Detergent composition |
December 14, 2004 |
| A cleaning composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water; a method of cleaning metal gate, contact hole, via hole and capacitor using the composition; a method of cleaning a resi |
| 6159865 |
Wafer treating solution and method for preparing the same |
December 12, 2000 |
| The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene |
| 6068788 |
Wafer-cleaning solution and process for the production thereof |
May 30, 2000 |
| The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene |
| 5980753 |
Process for recovering volatile acids |
November 9, 1999 |
| The present invention provides a process for recovering a volatile acid charaterized by bringing a waste liquid containing the volatile acid into contact with an amine having a boiling point of at least 50.degree. C. to thereby cause the amine to tonically adsorb the acid from the waste |
| 5763375 |
Cleaning agents and cleaning method |
June 9, 1998 |
| A cleaning agent characterized in that the agent comprises 0.1 to 4 wt. % of hydrofluoric acid, a surfactant of the following formula (1) in a concentration of 50 to 1500 ppm or a surfactant of the following formula (2) or (3) in a concentration of 50 to 100000 ppm, and the balance water |
| 5755989 |
Wet etching composition having excellent wetting property for semiconductors |
May 26, 1998 |
| The present invention provides a wet etching composition for semiconductors which is characterized in that a surfactant comprising the two components of an alkylsulfonic acid and an .omega.-hydrofluoro-alkylcarboxylic acid is added to a buffered hydrofluoric acid composed of hydrogen flu |
