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Inventor:
Isobe; Atsuo
Address:
Atsugi, JP
No. of patents:
44
Patents:












Patent Number Title Of Patent Date Issued
8008140 Method for manufacturing semiconductor device including hat-shaped electrode August 30, 2011
It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multil
7943885 Laser irradiation method and method of manufacturing semiconductor device May 17, 2011
By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical a
7795734 Semiconductor device and method of manufacturing the same September 14, 2010
To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high
7785947 Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by hi August 31, 2010
In order to manufacture a highly reliable and compact TFT, it is an object of the present invention to provide a method for manufacturing a semiconductor device for forming a gate electrode, a source wiring and a drain wiring with high reliability, and a semiconductor device. In the
7745293 Method for manufacturing a thin film transistor including forming impurity regions by diagonal d June 29, 2010
It is an object of the present invention to manufacture a thin film transistor having a required property without complicating steps and devices. It is another object of the present invention to provide a technique for manufacturing a semiconductor device having high reliability and
7737506 Semiconductor device and method of manufacturing the same June 15, 2010
An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel forma
7718547 Semiconductor device and method for manufacturing the same May 18, 2010
A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to
7709844 Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and May 4, 2010
A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400.degree. C. and above. Heat treatment at a high temperature (400-700.degree. C.) is possible because
7705357 Thin film transistor with channel region in recess April 27, 2010
A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region inc
7704812 Semiconductor circuit and method of fabricating the same April 27, 2010
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can
7704765 Method for manufacturing semiconductor device April 27, 2010
It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It i
7652286 Semiconductor device and semiconductor device producing system January 26, 2010
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically,
7635883 Method for manufacturing semiconductor device December 22, 2009
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plu
7582162 Semiconductor device and semiconductor device production system September 1, 2009
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and
7547593 Method of fabricating semiconductor device June 16, 2009
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deterio
7541228 Semiconductor device, method of manufacturing the same, and method of designing the same June 2, 2009
An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is
7538350 Semiconductor thin film device May 26, 2009
It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or
7534705 Method of manufacturing a semiconductor device May 19, 2009
An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting a
7507995 Semiconductor memory cell and semiconductor memory device March 24, 2009
An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is cryst
7449376 Method of manufacturing a semiconductor device November 11, 2008
An object of the present invention is to form a channel formation region, or a TFT formation region, using one crystal aggregate (domain) by controlling crystal location and size, thus suppressing TFT variations. According to the present invention, laser irradiation is performed sele
7410839 Thin film transistor and manufacturing method thereof August 12, 2008
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes high-speed operati
7387922 Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation s June 17, 2008
In a laser irradiation system, since a heavy scanning stage moves at a high speed, vibration is caused. When the vibration is transmitted to a vibration isolator where an optical system that forms a beam spot and a system are mounted, a laser irradiation track formed on a substrate,
7371623 Semiconductor device with semiconductor circuit comprising semiconductor units, and method for f May 13, 2008
The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film
7344925 Semiconductor device, method of manufacturing the same, and method of designing the same March 18, 2008
An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is
7326961 Semiconductor device and manufacturing method therefor February 5, 2008
To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a
7282380 Method for manufacturing semiconductor device October 16, 2007
It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It i
7179699 Method of fabricating semiconductor device February 20, 2007
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deterio
7166863 Semiconductor element, semiconductor device, electronic device, TV set and digital camera January 23, 2007
A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first
7148507 Semiconductor device having thin film transistor with position controlled channel formation regi December 12, 2006
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and
7148092 Semiconductor device and method of manufacturing the same December 12, 2006
To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high
7145175 Semiconductor circuit and method of fabricating the same December 5, 2006
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can
7129122 Semiconductor memory cell and semiconductor memory device October 31, 2006
An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is cryst
7129121 Method for manufacturing semiconductor device October 31, 2006
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plu
7115903 Semiconductor device and semiconductor device producing system October 3, 2006
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically,
7105392 Semiconductor device and method of manufacturing the same September 12, 2006
An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel forma
7078768 Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and July 18, 2006
A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400.degree. C. and above. Heat treatment at a high temperature (400 700.degree. C.) is possible because
6930326 Semiconductor circuit and method of fabricating the same August 16, 2005
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can
6911358 Method for manufacturing semiconductor device June 28, 2005
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plu
6890840 Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization May 10, 2005
An object of the present invention is to form a channel formation region, or a TFT formation region, using one crystal aggregate (domain) by controlling crystal location and size, thus suppressing TFT variations. According to the present invention, laser irradiation is performed sele
6875998 Semiconductor device, method of manufacturing the same, and method of designing the same April 5, 2005
An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is
6841797 Semiconductor device formed over a surface with a drepession portion and a projection portion January 11, 2005
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and
6841434 Method of fabricating semiconductor device January 11, 2005
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deterio
6822293 Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and November 23, 2004
A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400.degree. C. and above. Heat treatment at a high temperature (400-700.degree. C.) is possible because
6586766 Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fa July 1, 2003
The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film










 
 
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