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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Ishiduki; Megumi
Address:
Kanagawa-ken, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
8274108 Nonvolatile semiconductor memory device and method for manufacturing the same September 25, 2012
A nonvolatile semiconductor memory device, includes: a stacked body including a plurality of insulating films alternately stacked with a plurality of electrode films, the electrode films being divided to form a plurality of control gate electrodes aligned in a first direction; a plur
8264031 Nonvolatile semiconductor memory device and method for manufacturing same September 11, 2012
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a multilayer structure; a semiconductor pillar; a third insulating film; and a fourth insulating film layer. The a multilayer structure is provided on the semiconductor substrate and including a plurality
8203884 Nonvolatile semiconductor memory device June 19, 2012
A nonvolatile semiconductor memory device, includes: a stacked structural unit including electrode films alternately stacked with inter-electrode insulating films; a first and second semiconductor pillars piercing the stacked structural unit; a connection portion semiconductor layer to
8193571 Stacked type nonvolatile semiconductor memory device and method of manufacturing same June 5, 2012
A stacked body is formed on a silicon substrate by stacking a plurality of insulating films and a plurality of electrode films alternately and through-holes are formed to extend in the stacking direction. Next, gaps are formed between the electrode films using etching the insulating film
8188530 Nonvolatile semiconductor memory device and method for manufacturing same May 29, 2012
A semiconductor memory device provided with a cell array section and a peripheral circuit section, the device includes: a back gate electrode; a stacked body provided on the back gate electrode; a plurality of semiconductor pillars extending in a stacking direction; connection member
8178919 Nonvolatile semiconductor memory device and method for manufacturing same May 15, 2012
A nonvolatile semiconductor memory device, includes: a stacked structural unit including electrode films alternately stacked with inter-electrode insulating films; first and second semiconductor pillars piercing the stacked structural unit; a connection portion semiconductor layer el
8120961 Nonvolatile semiconductor memory device February 21, 2012
A stacked body with a plurality of dielectric films and electrode films alternately stacked therein is provided. The electrode film is divided into a plurality of control gate electrodes extending in one direction. The stacked body is provided with a U-pillar penetrating through the
8089120 Semiconductor memory device January 3, 2012
A semiconductor memory device includes: a semiconductor substrate; a stacked body with a plurality of conductive layers and a plurality of dielectric layers alternately stacked, the stacked body being provided on the semiconductor substrate; a semiconductor layer provided inside a hole
8084807 Nonvolatile semiconductor memory device and method for manufacturing same December 27, 2011
A multilayer body is formed by alternately stacking electrode films serving as control gates and dielectric films in a direction orthogonal to an upper surface of a silicon substrate. Trenches extending in the word line direction are formed in the multilayer body and a memory film is
8017993 Nonvolatile semiconductor memory device and method for manufacturing same September 13, 2011
A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through which a through hole extending in the stacking direction is formed; a semiconductor pillar buried inside the through hole; and
7982261 Nonvolatile semiconductor memory device and method for manufacturing same July 19, 2011
A nonvolatile semiconductor memory device includes a first stacked body on a silicon substrate, and a second stacked body is provided thereon. The first stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films, and a first portion
7969789 Method for driving nonvolatile semiconductor memory device June 28, 2011
In a nonvolatile semiconductor memory device having n (n is an integer of two or more) electrode films stacked and having charge storage layers provided above and below each of the electrode films, when data "0" is written by injecting electrons into the charge storage layer on a source










 
 
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