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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Ishibashi; Keiji
Address:
Tokyo, JP
No. of patents:
4
Patents:












Patent Number Title Of Patent Date Issued
6955836 Silicon oxide film formation method October 18, 2005
A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO.sub.2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N.sub.2 gas, NO gas, N.sub.2 O gas, NO.sub.2 gas
6942892 Hot element CVD apparatus and a method for removing a deposited film September 13, 2005
The present invention provides a method for efficiently and completely removing a film deposited inside a film forming chamber. In addition, the invention provides a CVD apparatus using heating element which an in-situ cleaning method can be applied and its in-situ leaning method.The rem
6593548 Heating element CVD system July 15, 2003
A heating element CVD device capable of providing a high productivity and decomposing and/or activating the material gas led into a processing container by a heating element and stacking film on a substrate disposed in the processing container, wherein the connection part area of the
6375756 Method for removing a deposited film April 23, 2002
A method for efficiently and completely removing a film deposited inside a film forming chamber and an in-situ cleaning method of a hot element CVD apparatus. A hot element is disposed in a chamber is heated up to a temperature of 2000.degree. C. or higher after the chamber is exhausted.










 
 
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