Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Ishibashi; Akihiko
Address:
Osaka, JP
No. of patents:
37
Patents:












Patent Number Title Of Patent Date Issued
8222670 Semiconductor light emitting element and method for manufacturing same July 17, 2012
A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17
8044430 Nitride semiconductor light-emitting device comprising multiple semiconductor layers having subs October 25, 2011
A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an act
8030677 Semiconductor light emitting element and method for manufacturing same October 4, 2011
A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17
8018134 Light source, optical pickup, and electronic apparatus September 13, 2011
A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor
7852891 Nitride semiconductor light-emitting device December 14, 2010
A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a
7846820 Nitride semiconductor device and process for producing the same December 7, 2010
A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101;
7816696 Nitride semiconductor device and method for manufacturing same October 19, 2010
An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a
7704860 Nitride-based semiconductor device and method for fabricating the same April 27, 2010
A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which
7606276 Nitride semiconductor device and method for fabricating the same October 20, 2009
A nitride semiconductor device 100 according to the present invention includes: an n-GaN substrate 1; a semiconductor multilayer structure, which has been formed on the principal surface of the n-GaN substrate 1 and which includes a p-type region and an n-type region; a p-electrode 3
7501667 Nitride semiconductor light-emitting device March 10, 2009
A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a
7470608 Semiconductor light emitting device and fabrication method thereof December 30, 2008
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals there
7407421 Light source, optical pickup, and electronic apparatus August 5, 2008
A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor
7338827 Nitride semiconductor laser and method for fabricating the same March 4, 2008
A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substra
7221037 Method of manufacturing group III nitride substrate and semiconductor device May 22, 2007
The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate. The manufacturing method of the present invention includes: (i) forming a semiconductor
7160748 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor devic January 9, 2007
The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growin
7056756 Nitride semiconductor laser device and fabricating method thereof June 6, 2006
A method for fabricating a nitride semiconductor laser device including a step to expose surfaces of an n-type nitride semiconductor layer (102) and a p-type nitride semiconductor layer (108); a step to cover the surface of the multi-layered semiconductor; with an insulating film (109)
7030417 Semiconductor light emitting device and fabrication method thereof April 18, 2006
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals there
6940100 Group III-V nitride semiconductor light-emitting device which allows for efficient injection of September 6, 2005
A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than
6927149 Nitride semiconductor device and fabrication method thereof, and method for forming nitride semi August 9, 2005
A nitride semiconductor device comprising a substrate (101) having trenches (102b) each formed of a cavity and peaks (102a) formed from a group III nitride on the surface thereof; a nitride semiconductor layer (106) formed on the substrate (101); and a nitride semiconductor multilayered
6921678 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor devic July 26, 2005
The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a
6911351 Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, June 28, 2005
The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al.sub.u Ga.sub.v In.sub.w N, wherein 0.ltoreq.u, v, w.ltoreq.1 and u+v+w=1; forming, in an upper portion of the first nitride sem
6806109 Method of fabricating nitride based semiconductor substrate and method of fabricating nitride ba October 19, 2004
On a sapphire base (701), a GaN layer (702) and a substrate separating layer (703) are sequentially deposited, and the GaN layer (702) and the substrate separating layer (703) are processed to have a plurality of ridge stripes (702a) and recess portions (702b). Subsequently, a GaN based
6764871 Method for fabricating a nitride semiconductor device July 20, 2004
A method for fabricating a nitride semiconductor device comprising steps of forming a low-temperature deposited layer composed of a Group III-Group V nitride semiconductor containing at least Al onto a surface of substrate (101) at a first temperature; subjecting the low-temperature depo
6720586 Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, April 13, 2004
The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al.sub.u Ga.sub.v In.sub.w N, wherein 0.ltoreq.u, v, w .ltoreq.1 and u+v+w=1; forming, in an upper portion of the first nitride se
6667185 Method of fabricating nitride semiconductor device December 23, 2003
The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growing another nitride semiconductor
6614059 Semiconductor light-emitting device with quantum well September 2, 2003
A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than
6611005 Method for producing semiconductor and semiconductor laser device August 26, 2003
The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III sou
6586774 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor devic July 1, 2003
The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a
6518082 Method for fabricating nitride semiconductor device February 11, 2003
First, the substrate temperature is set to 1020.degree. C., and an n-type cladding layer (14) made of n-type Al.sub.0.1 Ga.sub.0.9 N, an n-type optical guide layer (15) made of n-type GaN, and a flatness maintenance layer (16) made of n-type Al.sub.0.2 Ga.sub.0.8 N for maintaining the
6466597 Semiconductor laser device October 15, 2002
A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al.sub.0.35 Ga.sub.0.65 N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al.sub.0.2 Ga.sub.0.8 N/Al.sub.0.2
6324200 Semiconductor laser device November 27, 2001
A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al.sub.0.3 Ga.sub.0.7 N cladding layer, an n-type Al.sub.0.25 Ga.sub.0.75 N optical guide layer, a multi-quantum well active layer, in which Al.sub.0.2 Ga.sub.0.8 N wel
6281522 Method of manufacturing a semiconductor and a semiconductor light-emitting device August 28, 2001
First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rat
6265287 Method for producing semiconductor layer for a semiconductor laser device July 24, 2001
The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III sour
6072762 Optical disk recording/reproducing method and apparatus for preventing wave length shift during June 6, 2000
Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for split
6030849 Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate February 29, 2000
On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In
5923950 Method of manufacturing a semiconductor light-emitting device July 13, 1999
A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3
5923690 Semiconductor laser device July 13, 1999
A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a










 
 
  Recently Added Patents
Uni-directional transient voltage suppressor (TVS)
Method and structure for image local contrast enhancement
Method and apparatus for producing homogeneous magnetic fields
Flexible organic light emitting device and manufacturing method thereof
Robot control device
Method and apparatus for variable accuracy inter-picture timing specification for digital video encoding
Soybean cultivar CL0911444
  Randomly Featured Patents
Quad cable construction for IEEE 1394 data transmission
Spin valve with improved capping layer structure
Heat sink clip with cammed handle
Shoe sole
Redundancy structure and method for high-speed serial link
Applying whip effect to magnetic tape exhibiting a tape stick condition
Cylinder for a folder unit
Package for food product taken out with a measuring device
Soybean variety XB26V05
Mobile device-based control of smart card operation