| Patent Number |
Title Of Patent |
Date Issued |
| 5196915 |
Semiconductor device |
March 23, 1993 |
| In a semiconductor device such as hybrid IC, thermal heads, etc., a thick film resistor of the semiconductor device contains a boride particle of a metal dispersed in a glass matrix, the particle having a particles size of 0.005 to 0.1 .mu.m. Generation of a thermal stress can be suppres |
| 4603008 |
Critical temperature sensitive resistor material |
July 29, 1986 |
| Disclosed herein is a critical temperature sensitive resistor material which comprises 60 to 90% by weight of VO.sub.2 and 40 to 10% by weight of RuO.sub.2. This material exhibits hysteresis of resistance that decreases remarkably over a temperature range in which the resistance varies |
| 4587040 |
Thick film thermistor composition |
May 6, 1986 |
| A thick film thermistor composition is prepared by mixing metal oxide powders of at least two of Mn, Co and Ni, and oxide powder of Ru as a noble metal, firing the resulting mixture, thereby obtaining a compound oxide thermistor of spinel structure, pulverizing the resulting compound |
| 4586143 |
Gas detecting apparatus |
April 29, 1986 |
| A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed g |
| 4547625 |
Glass multilayer wiring board and method for its manufacture |
October 15, 1985 |
| A method for manufacturing the insulating layers of a glass multilayer wiring board from a mixture of (1) 30-90 wt. % of a borosilicate glass consisting of 55-75 wt. % of SiO.sub.2, 13-25 wt. % of B.sub.2 O.sub.3, 5-13 wt. % of Al.sub.2 O.sub.3, each 1-5 wt. % of PbO, MgO, and BaO, and |
| 4490429 |
Process for manufacturing a multilayer circuit board |
December 25, 1984 |
| The multilayer circuit board is constituted of an inorganic insulating material such as a crystallizable glass, crystalline oxide or noncrystallized glass; a conductive material such as a metal or a mixture of a metal with noncrystallized glass; a resistor material consisting of a mi |
| 4481813 |
Dew sensor |
November 13, 1984 |
| A dew sensor of direct current type and resistance-lowering type with increasing humidity for quick and sharp detection of dewing is provided, which comprises a pair of counterposed electrodes, humidity-sensitive layer of insulating porous metal oxide with a porosity of 20 to 60% pro |
| 4457161 |
Gas detection device and method for detecting gas |
July 3, 1984 |
| A gas detection device and a method for detecting a gas where gas information including concentrations of gas components in a mixed gas, concentration, presence of specific gas components and the like is detected by measuring, e.g., the output voltages of a plurality of gas sensors h |
| 4424251 |
Thick-film multi-layer wiring board |
January 3, 1984 |
| A thick-film multi-layer wiring board in which the thick-film resistor provided in the inner layer is coated with a glass material selected from (a) and (b) below:(a) crystallized glass which is crystallized at 850.degree. C. or above, and(b) amorphous glass having a softening temperatur |
| 4386387 |
Low temperature sintering porcelain composition |
May 31, 1983 |
| A porcelain composition comprising Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3, PbTiO.sub.3 and Pb(Yb.sub.1/2 Nb.sub.1/2)O.sub.3 preferably within the range as defined by closed area of A-B-C-D-A in the accompanying triangular diagram can give a sintered product by sintering at a temperature as |
| 4361597 |
Process for making sensor for detecting fluid flow velocity or flow amount |
November 30, 1982 |
| A sensor for detecting a fluid flow velocity or flow amount with high precision and high reliability is made by applying a conductor paste comprising platinum powder and an organic vehicle to the outer surface of a fine inorganic insulating tube, followed by drying and firing, thereby |
| 4347166 |
Thermistor composition |
August 31, 1982 |
| A thermistor composition comprises oxide powder of at least two of Mn, Co, and Ni, and an oxide powder of Ru as a noble metal. |
| 4308571 |
Low temperature-sinterable dielectric composition and thick film capacitor using the same |
December 29, 1981 |
| A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A. |
| 4264889 |
Pressure transducer |
April 28, 1981 |
| A pressure transducer has at least one pressure transmitting space filled with liquid, a space for a pressure to be sensed connected to the pressure transmitting space through a diaphragm, and a pressure sensitive element in the pressure transmitting space for transducing a pressure tran |
| 4160227 |
Thermistor composition and thick film thermistor |
July 3, 1979 |
| This specification discloses a thermistor composition comprising a thermistor characteristic powder, a bismuth containing borosilicate glass frit and an electrically conductive powder comprising a mixture of a noble metal powder and ruthenium oxide powder which is selected from RuO.sub.2 |
