| Patent Number |
Title Of Patent |
Date Issued |
| 7616410 |
Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing th |
November 10, 2009 |
| There are provided a magnetic detecting element capable of maintaining large .DELTA.RA and of reducing magnetostriction by improving a material forming a free magnetic layer, and a method of manufacturing the same. An NiFeX alloy layer is formed in a free magnetic layer. For example, the |
| 7609489 |
Magnetic sensor using NiFe alloy for pinned layer |
October 27, 2009 |
| A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allow |
| 7599155 |
Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path |
October 6, 2009 |
| A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic laye |
| 7567413 |
Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, |
July 28, 2009 |
| There is provided a magnetic detecting element by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX |
| 7564661 |
Magnetic sensing element including free layer having gradient composition and method for manufac |
July 21, 2009 |
| A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer |
| 7558029 |
Magnetic detectible head comprising free layer |
July 7, 2009 |
| There is provided a magnetic detecting element having a large .DELTA.RA. A free magnetic layer has a three layer structure in which a CoFe layer, an Ni.sub.aFe.sub.b alloy layer (where a and b are represented by at %, 0.ltoreq.a.ltoreq.25, and a+b=100), and a CoFe layer are laminated fro |
| 7554776 |
CCP magnetic detecting element including a self-pinned CoFe layer |
June 30, 2009 |
| A CPP magnetic sensing element is provided which may exhibit a large value of .DELTA.RA (the product of the resistance variation .DELTA.R and area A of the magnetic sensing element). The magnetic sensing element includes a free magnetic layer and a pinned magnetic layer. At least one of |
| 7502210 |
CPP magnetic detecting device containing NiFe alloy on free layer thereof |
March 10, 2009 |
| A magnetic detecting device having a large .DELTA.RA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a Ni.sub.aFe.sub.b alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47.ltoreq.a.ltoreq.77 and a+b=100), and |
| 7499249 |
Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer |
March 3, 2009 |
| A magnetic detecting element capable of maintaining a large .DELTA.RA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an |
| 7499248 |
Magnetic detective head comprising free layer |
March 3, 2009 |
| A free magnetic layer is a laminated body of a Co.sub.2MnZ alloy layer (Z is one or more elements selected from a group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a Co.sub.aFe.sub.100-a alloy layer. The Co.sub.aFe.sub.100-a alloy layer has a composition ratio 76.ltoreq |
| 7480122 |
Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic all |
January 20, 2009 |
| A magnetic detecting device and a method of manufacturing the magnetic detecting device are provided. Non-magnetic material layer-side magnetic layers of second fixed magnetic layers form a fixed magnetic layer. Each of the non-magnetic material layer-side magnetic layers and a free |
| 7466525 |
Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free |
December 16, 2008 |
| A magnetic sensing element exhibiting a large .DELTA.RA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant .lamda.s. The free magnetic layer includes a Co.sub.2MnZ alloy layer (where Z may represent at least one element sel |
| 7362546 |
Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including m |
April 22, 2008 |
| A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X--Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and atoms forming the no |
| 7336453 |
Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal plan |
February 26, 2008 |
| A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equ |
| 7310207 |
Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlay |
December 18, 2007 |
| A magnetic sensing element using a Heusler alloy is provided. In the magnetic sensing element, a free magnetic layer composed of a Heusler alloy layer is disposed on a nonmagnetic layer that corresponds to an fcc layer having the face-centered cubic (fcc) structure. Equivalent crystal |
| 7220499 |
CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element |
May 22, 2007 |
| A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed |
| 7158354 |
Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have |
January 2, 2007 |
| A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose .beta. values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lo |
| 7126797 |
Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated |
October 24, 2006 |
| A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the |
| 7077936 |
Method of producing exchange coupling film and method of producing magnetoresistive sensor by us |
July 18, 2006 |
| A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentiall |
| 7054116 |
Spin valve element and thin film magnetic head |
May 30, 2006 |
| A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive |
| 7045224 |
Magnetic detecting element having antiferromagnetic film having predetermined space in track wid |
May 16, 2006 |
| The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, imp |
| 7029771 |
Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisot |
April 18, 2006 |
| An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, imp |
| 7005014 |
Method of producing exchange coupling film and method of producing magnetoresistive sensor by us |
February 28, 2006 |
| A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentiall |
| 6992867 |
Spin valve element and thin film magnetic head having antiferromagnetic coupled layers |
January 31, 2006 |
| A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive |
| 6893734 |
Magnetic sensing element with improved sensitivity and method for making the same |
May 17, 2005 |
| A magnetic sensing element includes a laminate, the laminate including a first antiferromagnetic layer; a pinned magnetic layer, the magnetization direction thereof being pinned by the first antiferromagnetic layer; a nonmagnetic conductive layer; a free magnetic layer, the magnetization |
| 6879472 |
Exchange coupling film and electoresistive sensor using the same |
April 12, 2005 |
| An exchange coupling film has an antiferromagnetic layer made of an antiferromagnetic material containing an element X and Mn, where the element X is selected from the group of elements consisting of Pt, Pd, Ir, Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has |
| 6856494 |
Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers |
February 15, 2005 |
| The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, |
| 6847508 |
Spin valve thin film magnetic element and thin film magnetic head |
January 25, 2005 |
| The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic |
| 6806804 |
Magnetic detecting element having .beta.-values selected for free magnetic layer and pinned magn |
October 19, 2004 |
| The present invention provides a spin valve magnetic detecting element having large .DELTA.R. The positive or negative sign of the .beta. value of a magnetic material constituting each of a first free magnetic sub-layer, a second free magnetic sub-layer and a pinned magnetic layer is |
| 6790541 |
Exchange coupling film and electroresistive sensor using the same |
September 14, 2004 |
| An exchange coupling film has an antiferromagnetic layer made of an antiferromagnetic material containing an element X and Mn, where the element X is selected from the group of elements consisting of Pt, Pd, Ir, Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has |
| 6764778 |
Thin film magnetic element with accurately controllable track width and method of manufacturing |
July 20, 2004 |
| A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the |
| 6757962 |
Method for manufacturing exchange bias type magnetic field sensing element |
July 6, 2004 |
| In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic laye |
| 6678128 |
Exchange coupling film and electroresistive sensor using the same |
January 13, 2004 |
| An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals |
| 6648985 |
Method of producing exchange coupling film and method of producing magnetoresistive sensor by us |
November 18, 2003 |
| A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially or |
| 6639762 |
Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manuf |
October 28, 2003 |
| A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in th |
| 6635366 |
Spin valve thin film magnetic element and thin film magnetic head |
October 21, 2003 |
| A spin valve thin film magnetic element is provided composed of an antiferromagnetic layer; a pinned magnetic layer, formed in contact with the antiferromagnetic layer, in which the direction of magnetization is pinned by an exchange coupling magnetic field with the antiferromagnetic |
| 6608739 |
Spin valve thin film magnetic element having first and second free magnetic layers having antipa |
August 19, 2003 |
| The present invention provides a spin valve thin film magnetic element in which the sensitivity and the rate of change in resistance can be increased while stably maintaining the ferrimagnetic state of a free magnetic layer. The spin valve thin film magnetic element includes an antif |
| 6607641 |
Method of producing exchange coupling film and method of producing magnetoresistive sensor by us |
August 19, 2003 |
| An exchange coupling film includes a first antiferromagnetic layer formed on a pinned magnetic layer, and a second antiferromagnetic layer formed thereon. A composition ratio of an element X in the first antiferromagnetic layer is larger than that of the second antiferromagnetic laye |
| 6586121 |
Spin-valve thin-film magnetic element |
July 1, 2003 |
| A spin-valve thin-film magnetic element includes a substrate; an antiferromagnetic layer; a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antifer |
| 6500570 |
Spin-valve magnetoresistive element and method for making the same |
December 31, 2002 |
| A spin-valve magnetoresistive element includes an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic interlayer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a pair of longitudinal biasing layers, and a pair of lead layers. Whe |
