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Inventor: I-Chang; Tsao
Address: Hsinchu, TW
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7235466 |
Method of fabricating a polysilicon layer |
June 26, 2007 |
| A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an amorphous silicon layer is formed over the buffer layer. Finally, a laser annealing process is |
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