Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Hwang; Jeonghyun
Address:
Ithaca, NY
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7993938 Highly doped III-nitride semiconductors August 9, 2011
A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed
7622322 Method of forming an AlN coated heterojunction field effect transistor November 24, 2009
A passivation layer of AlN is deposited on a GaN channel HFET using molecular beam epitaxy (MBE). Using MBE, many other surfaces may also be coated with AlN, including silicon devices, nitride devices, GaN based LEDs and lasers as well as other semiconductor systems. The deposition is
7485901 Highly doped III-nitride semiconductors February 3, 2009
A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contami
7482191 Highly doped III-nitride semiconductors January 27, 2009
A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed
6953740 Highly doped III-nitride semiconductors October 11, 2005
A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contami
6888170 Highly doped III-nitride semiconductors May 3, 2005
A method of forming a highly doped layer of AlGaN, is practiced by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed










 
 
  Recently Added Patents
Use of emerging non-volatile memory elements with flash memory
Electric washing machine
Playback device for stereoscopic viewing, integrated circuit, and program
High surface area composition for use in the catalytic hydroconversion of a heavy hydrocarbon feedstock, a method making such composition and its use
Method and apparatus for selective decoding in a wireless communication system
Optoelectronic component and method for producing an optoelectronic component
Liquid crystal display apparatus
  Randomly Featured Patents
Query expansion
Split die and method for production of compacted powder metal parts
Collar lock and seal assembly for well tools
Fiber coupler displacement transducer
Antenna diversity for control device applications
Process for production of olefin polymer
Image display system and image display methods
Delivery systems for efficient vaporization of precursor source material
Radiant energy sensitive device and method
Livewell containment system