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Inventor:
Huttner; Thomas
Address:
Marktoberdorf, DE
No. of patents:
4
Patents:












Patent Number Title Of Patent Date Issued
7968416 Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production June 28, 2011
An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region.
7592648 Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production September 22, 2009
An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region.
7038255 Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method May 2, 2006
An explanation is given of, inter alia, an integrated circuit arrangement (100) containing an npn transistor (102) and a pnp transistor (104). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout (142) for an edge terminal region (120)
6958282 SOI semiconductor configuration and method of fabricating the same October 25, 2005
A semiconductor configuration has a base layer made of semiconductor material and formed, in particular, by a substrate. An insulation layer is arranged above the base layer, and a layer made of monocrystalline silicon adjoins the insulation layer. A passivating substance is present, wit










 
 
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