| Patent Number |
Title Of Patent |
Date Issued |
| 7572722 |
Method of fabricating nickel silicide |
August 11, 2009 |
| A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is per |
| 7390754 |
Method of forming a silicide |
June 24, 2008 |
| A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM |
| 7385294 |
Semiconductor device having nickel silicide and method of fabricating nickel silicide |
June 10, 2008 |
| A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is per |
| 6849541 |
Method of fabricating a dual damascene copper wire |
February 1, 2005 |
| A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insu |
