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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Huang; Kun-Ming
Address:
Taipei, TW
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
7888767 Structures of high-voltage MOS devices with improved electrical performance February 15, 2011
A semiconductor structure includes a first high-voltage well (HVW) region of a first conductivity type overlying a substrate, a second HVW region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first HVW region, and
7221039 Thin film transistor (TFT) device structure employing silicon rich silicon oxide passivation lay May 22, 2007
A thin film transistor device structure and a method for fabricating the thin film transistor device structure each comprise a thin film transistor device formed over a substrate. The thin film transistor device structure also comprises a passivation layer formed of a silicon rich si
7183171 Pyramid-shaped capacitor structure February 27, 2007
A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a
7109090 Pyramid-shaped capacitor structure September 19, 2006
A capacitor structure which has a generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer a
6479376 Process improvement for the creation of aluminum contact bumps November 12, 2002
A new method is provided for the creation of an aluminum bump on a surface of a semiconductor device. A patterned layer of aluminum overlying a substrate is created, the patterned layer of aluminum is the layer of aluminum over which a contact bump is to be created. A layer of passiv










 
 
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