| Patent Number |
Title Of Patent |
Date Issued |
| 7727798 |
Method for production of diamond-like carbon film having semiconducting property |
June 1, 2010 |
| Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inse |
| 7397124 |
Process of metal interconnects |
July 8, 2008 |
| A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric laye |
| 7232752 |
Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operati |
June 19, 2007 |
| A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the si |
| 6849541 |
Method of fabricating a dual damascene copper wire |
February 1, 2005 |
| A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insu |
| 6709544 |
Chemical mechanical polishing equipment |
March 23, 2004 |
| The present invention related to a CMP equipment, compatible with the existing manufacture processes. The CMP equipment of the present invention employs strip polishing platens that can be smaller than the wafer size, so that the layout is compact and the space is effectively utilized, |
| 6706140 |
Control system for in-situ feeding back a polish profile |
March 16, 2004 |
| A chemical mechanical polishing (CMP) machine has a polish platen, having at least a first ring-shaped region and a second ring-shaped region. A control system for in-situ feeding back a polish profile of the CMP machine has at least a first sensor and a second sensor, respectively i |
| 6696361 |
Post-CMP removal of surface contaminants from silicon wafer |
February 24, 2004 |
| A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the si |
| 6660627 |
Method for planarization of wafers with high selectivities |
December 9, 2003 |
| A method for planarization of a semiconductor wafer with a high selectivity is describe. The semiconductor wafer has a hard mask, a stop layer disposed on the hard mask, and a barrier layer disposed on the stop layer. The method includes performing a chemical mechanical polishing (CMP) |
