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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Hshieh; Fwu-Iuan
Address:
Saratoga, CA
No. of patents:
123
Patents:


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Patent Number Title Of Patent Date Issued
8159021 Trench MOSFET with double epitaxial structure April 17, 2012
A trenched semiconductor power device includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The trenched semiconductor power device further includes a first epitaxial layer above heavily doped
8115252 Elimination of gate oxide weak spot in deep trench February 14, 2012
A MOSFET with a 0.7.about.2.0 micrometers deep trench is formed by first carrying out a processing step of opening a trench in a semiconductor substrate. A thick insulator layer is then deposited in the trench such that the film at the bottom of the trench is much thicker than the si
8058670 Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch- November 15, 2011
A trench insulation gate bipolar transistor (IGBT) power device with a monolithic deep body clamp diode comprising a plurality of trench gates surrounded by emitter regions of a first conductivity type near a top surface of a semiconductor substrate of the first conductivity type enc
8022471 Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled September 20, 2011
A trenched semiconductor power device includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The trenched semiconductor power device further comprises tilt-angle implanted body dopant regions su
7977745 Tungsten plug drain extension July 12, 2011
A power metal-oxide-semiconductor field effect transistor (MOSFET) cell includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A voltage sustaining layer is formed on the semiconductor substrate. A highly doped active zone of a first conduct
7929321 Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications April 19, 2011
A DC-to-DC converter includes a high-side transistor and a low-side transistor wherein the high-side transistor is implemented with a high-side enhancement mode MOSFET. The low side-transistor further includes a low-side enhancement MOSFET shunted with a depletion mode transistor hav
7863685 Trench MOSFET with embedded junction barrier Schottky diode January 4, 2011
A trenched semiconductor power device that includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. Each of the body regions extended between two adjacent trenched gates further having a gap expos
7816729 Trenched MOSFET device with trenched contacts October 19, 2010
A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells in an active cell area and extending as trench-gate fingers to intersect with a trenched gate under the gate metal runner at a ter
7812409 Trench MOSFET with cell layout, ruggedness, truncated corners October 12, 2010
A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells wherein the layout of the trenched gate surrounding the transistor cells as closed cells having truncated corners or rounded corne
7800185 Closed trench MOSFET with floating trench rings as termination September 21, 2010
A semiconductor power device includes a plurality of closed N-channel MOSFET cells surrounded by trenched gates constituting substantially a square or rectangular cell. The trenched gates are further extended to a gate contact area and having greater width as wider trenched gates for
7772086 Process for high voltage superjunction termination August 10, 2010
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surro
7759204 Process for high voltage superjunction termination July 20, 2010
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surro
7704864 Method of manufacturing a superjunction device with conventional terminations April 27, 2010
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a heavily doped region of a first conductivity and has a lightly doped region of the first conductivity. The semiconductor substrate a plurality of trenches etched into an active regi
7687851 High density trench MOSFET with reduced on-resistance March 30, 2010
A method for manufacturing a trenched metal oxide semiconductor field effect transistor (MOSFET) cell includes the steps of opening a gate trench in a semiconductor substrate and implanting ions of a first conductivity type same as a conductivity type of a source region with at least
7646058 Device configuration and method to manufacture trench MOSFET with solderable front metal January 12, 2010
A vertical semiconductor power device includes a plurality of semiconductor power cells connected to a bottom electric terminal disposed on a bottom surface of a semiconductor substrate and at least a top electrical terminal disposed on a top surface of the substrate and connected to
7633121 Trench MOSFET with implanted drift region December 15, 2009
A method to manufacture a trenched semiconductor power device including a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. The method for manufacturing the trenched semiconductor power device includes
7629646 Trench MOSFET with terraced gate and manufacturing method thereof December 8, 2009
A trench metal oxide semiconductor field effect transistor (MOSFET) with a terraced trench gate. An epitaxial layer with a plurality of trenches is provided and a gate oxide layer is covered the sidewalls and bottoms of the trenches. A polysilicon layer is filled in the trenches, wherein
7622787 Process for high voltage superjunction termination November 24, 2009
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surro
7592650 High density hybrid MOSFET device September 22, 2009
A hybrid semiconductor power device that includes a plurality of closed power transistor cells each surrounded by a first and second trenched gates constituting substantially a closed cell and a plurality of stripe cells comprising two substantially parallel trenched gates constituting
7511357 Trenched MOSFETs with improved gate-drain (GD) clamp diodes March 31, 2009
A MOSFET device that includes a first Zener diode connected between a gate metal and a drain metal of said semiconductor power device for functioning as a gate-drain (GD) clamp diode. The GD clamp diode includes multiple back-to-back doped regions in a polysilicon layer doped with do
7439583 Tungsten plug drain extension October 21, 2008
A power metal-oxide-semiconductor field effect transistor (MOSFET) cell includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A voltage sustaining layer is formed on the semiconductor substrate. A highly doped active zone of a first conduct
7410891 Method of manufacturing a superjunction device August 12, 2008
A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etched through the oxid
7364994 Method for manufacturing a superjunction device with wide mesas April 29, 2008
A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewall, and angularly i
7354818 Process for high voltage superjunction termination April 8, 2008
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surro
7199006 Planarization method of manufacturing a superjunction device April 3, 2007
A method of manufacturing a semiconductor device includes providing a substrate having first and second main surfaces. The substrate has a heavily doped region of a first conductivity at the second main surface and has a lightly doped region of the first conductivity at the first mai
7109110 Method of manufacturing a superjunction device September 19, 2006
A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etched through the oxid
7094640 Method of making a trench MOSFET device with improved on-resistance August 22, 2006
A method of forming a trench MOSFET device includes depositing an epitaxial layer over a substrate, both having the first conductivity type, the epitaxial layer having a lower majority carrier concentration than the substrate, forming a body region of a second conductivity type withi
7052982 Method for manufacturing a superjunction device with wide mesas May 30, 2006
A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewall, and angularly i
7049668 Gate contacting scheme of a trench MOSFET structure May 23, 2006
A trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure includes crisscrossing trenches formed in a semiconductor substrate. The trenches include inner surfaces filled with conductive material which is electrically separated from the substrate by insulating mate
7049194 Trench DMOS device with improved drain contact May 23, 2006
A trench DMOS transistor device that comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than the substrate; (c) a trench extending into the
7041560 Method of manufacturing a superjunction device with conventional terminations May 9, 2006
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a heavily doped region of a first conductivity and has a lightly doped region of the first conductivity. The semiconductor substrate a plurality of trenches etched into an active regi
7019360 High voltage power mosfet having a voltage sustaining region that includes doped columns formed March 28, 2006
A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first co
7015125 Trench MOSFET device with polycrystalline silicon source contact structure March 21, 2006
A trench MOSFET transistor device and a method of making the same. The device comprises: (a) a silicon substrate of first conductivity type; (b) a silicon epitaxial layer of first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than
6979621 Trench MOSFET having low gate charge December 27, 2005
A trench MOSFET device comprising: (a) a silicon substrate of a first conductivity type (preferably N-type conductivity); (b) a silicon epitaxial layer of the first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than the substr
6977203 Method of forming narrow trenches in semiconductor substrates December 20, 2005
A method of forming a trench within a semiconductor substrate. The method comprises, for example, the following: (a) providing a semiconductor substrate; (b) providing a patterned first CVD-deposited masking material layer having a first aperture over the semiconductor substrate; (c)
6884683 Trench DMOS transistor having a zener diode for protection from electro-static discharge April 26, 2005
A trench DMOS transistor having overvoltage protection includes a substrate of a first conductivity type and a body region of a second conductivity type formed over the substrate. At least one trench extends through the body region and the substrate. An insulating layer lines the trench
6849899 High speed trench DMOS February 1, 2005
A method for making trench DMOS is provided that utilizes polycide and refractory techniques to make trench DMOS which exhibit low gate resistance, low gate capacitance, reduced distributed RC gate propagation delay, and improved switching speeds for high frequency applications.
6822288 Trench MOSFET device with polycrystalline silicon source contact structure November 23, 2004
A trench MOSFET transistor device and a method of making the same. The device comprises: (a) a silicon substrate of first conductivity type; (b) a silicon epitaxial layer of first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than
6781196 Trench DMOS transistor having improved trench structure August 24, 2004
A trench DMOS transistor cell is provided that includes a substrate of a first conductivity type and a body region located on the substrate, which has a second conductivity type. At least one trench extends through the body region and the substrate. An insulating layer lines the trench a
6777745 Symmetric trench MOSFET device and method of making same August 17, 2004
A trench MOSFET transistor device and method of making the same are provided. The trench MOSFET transistor device comprises: (a) a drain region of first conductivity type; (b) a body region of a second conductivity type provided over the drain region, such that the drain region and t
6770548 Trench schottky rectifier August 3, 2004
A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity
6762098 Trench DMOS transistor with embedded trench schottky rectifier July 13, 2004
An integrated circuit having a plurality of trench Schottky barrier rectifiers within one or more rectifier regions and a plurality of trench DMOS transistors within one or more transistor regions. The integrated circuit comprises: (a) a substrate of a first conductivity type; (b) an
6750104 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed June 15, 2004
A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first co
6740951 Two-mask trench schottky diode May 25, 2004
A Schottky rectifier includes a semiconductor structure having first and second opposing faces each extending to define an active semiconductor region and a termination semiconductor region. The semiconductor structure includes a cathode region of the first conductivity type adjacent the
6713352 Method of forming a trench MOSFET with structure having increased cell density and low gate char March 30, 2004
A trench MOSFET includes a plurality of trench segments in an upper surface of an epitaxial layer, extending through a second conductivity type region into a first conductivity type epitaxial region, segment at least partially separated from an adjacent segment by a terminating region, a
6707127 Trench schottky rectifier March 16, 2004
A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity
6674124 Trench MOSFET having low gate charge January 6, 2004
A trench MOSFET device comprising: (a) a silicon substrate of a first conductivity type (preferably N-type conductivity); (b) a silicon epitaxial layer of the first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than the substr
6657256 Trench DMOS transistor having a zener diode for protection from electro-static discharge December 2, 2003
A trench DMOS transistor having overvoltage protection includes a substrate of a first conductivity type and a body region of a second conductivity type formed over the substrate. At least one trench extends through the body region and the substrate. An insulating layer lines the trench
6657255 Trench DMOS device with improved drain contact December 2, 2003
A trench DMOS transistor device that comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than the substrate; (c) a trench extending into the
6657254 Trench MOSFET device with improved on-resistance December 2, 2003
A trench MOSFET device and method of making the same. The trench MOSFET device comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of the first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than th
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