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Inventor:
Hoshi; Masakatsu
Address:
Yokohama, JP
No. of patents:
39
Patents:












Patent Number Title Of Patent Date Issued
8164116 Semiconductor device with hetero semiconductor region and method of manufacturing the same April 24, 2012
A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second el
8067776 Method of manufacturing semiconductor device and semiconductor device manufactured thereof November 29, 2011
Methods of manufacturing a semiconductor device including a semiconductor substrate and a hetero semiconductor region including a semiconductor material having a band gap different from that of the semiconductor substrate and contacting a portion of a first surface of the semiconduct
8053320 Semiconductor device and manufacturing method thereof November 8, 2011
An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the
7989295 Method of manufacturing semiconductor device August 2, 2011
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconducto
7910923 Semiconductor device March 22, 2011
A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon having a band gap
7902555 Semiconductor device March 8, 2011
A hetero semiconductor corner region, which is a current-concentration relief region that keeps a reverse bias current from concentrating on the convex corner, is arranged in a hetero semiconductor region. Thereby, a current concentration on the convex corner can be prevented. As a resul
7902025 Method of manufacturing semiconductor device March 8, 2011
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconducto
7880199 Semiconductor device and manufacturing method thereof February 1, 2011
A semiconductor device is provided with: a semiconductor substrate of a predetermined electroconduction type; a hetero semiconductor region contacted with a first main surface of the semiconductor substrate and comprising a semiconductor material having a bandgap different from that
7859015 Semiconductor device December 28, 2010
A semiconductor device is provided with a semiconductor region, a gate electrode, a source electrode and a drain electrode. The semiconductor region is formed on a semiconductor substrate surface and includes a first semiconductor portion of a first conducting type, a second semicond
7807534 Method for manufacturing semiconductor device and semiconductor device manufactured therefrom October 5, 2010
A method for producing a semiconductor device includes forming a first hetero-semiconductor layer as a hetero-junction to a surface of a silicon carbide epitaxial layer. This layer is composed of polycrystalline silicon having a band gap different from that of the silicon carbide epi
7781802 Semiconductor device and manufacturing method thereof August 24, 2010
As semiconductor regions in contact with a first main surface of a semiconductor base composed by forming an N- silicon carbide epitaxial layer on an N+ silicon carbide substrate connected to a cathode electrode, there are provided both of an N+ polycrystalline silicon layer of a sam
7781786 Semiconductor device having a heterojunction diode and manufacturing method thereof August 24, 2010
Impurity concentration of a second semiconductor region is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region and the second semiconductor region, a breakdown voltage at least in a heterojunction region other
7768035 Semiconductor device and method of manufacturing the same August 3, 2010
A semiconductor device has a semiconductor base of a first conductivity type; a hetero semiconductor region in contact with the semiconductor base; a gate electrode adjacent to a portion of a junction between the hetero semiconductor region and the semiconductor base across a gate in
7749845 Semiconductor device manufacturing method July 6, 2010
A method of manufacturing a semiconductor device having a polycrystalline silicon layer (5) includes; a step of forming a mask layer (7) on the polycrystalline silicon layer (5); a step of forming a side wall (8) that is provided on a side face of the mask layer (7) and covers part of th
7714352 Hetero junction semiconductor device May 11, 2010
A semiconductor device, includes: a first conductivity-semiconductor substrate; a hetero semiconductor region for forming a hetero junction with the first conductivity-semiconductor substrate; a gate electrode adjacent to a part of the hetero junction by way of a gate insulating film
7695997 Semiconductor device and manufacturing method thereof April 13, 2010
An electrostatic discharge protection element and a protection resistor, which are formed on an N- drain region with a field oxide film interposed therebetween for the purpose of preventing electrical breakdown of a field effect transistor, are composed as a stacked bidirectional Zener
7671383 Semiconductor device and method of producing the same March 2, 2010
A semiconductor device, includes: a first conductivity type semiconductor base having a main face; a hetero semiconductor region contacting the main face of the semiconductor base and forming a hetero junction in combination with the semiconductor base, the semiconductor base and the
7642149 Method for producing semiconductor device January 5, 2010
A method for producing a semiconductor device which includes: a semiconductor base, a hetero semiconductor region made of a semiconductor material different in band gap from a semiconductor material for the semiconductor base, and so configured as to form a hetero junction in combina
7605017 Method of manufacturing a semiconductor device and products made thereby October 20, 2009
Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a he
7588961 Semiconductor device and manufacturing method thereof September 15, 2009
In general, this disclosure describes a semiconductor device that exhibits an increased resistance and reduced leakage current in a reverse-biased state, and a method for manufacturing such a semiconductor device. For example, in one embodiment, the increased resistance in the revers
7531396 Method of manufacturing semiconductor device May 12, 2009
A method of manufacturing a semiconductor device is disclosed. The semiconductor device includes a semiconductor body of a first conductivity type, a hetero semiconductor region adjacent to one main surface of the semiconductor body and having a band gap different from that of the se
7521731 Semiconductor device and method of manufacturing the same April 21, 2009
A semiconductor device of the invention includes a first conductive type semiconductor base substrate; and a switching mechanism which is formed on a first main surface of the semiconductor base substrate and switches ON/OFF of a current. In the semiconductor base substrate, a plurality
7476590 Method of manufacturing semiconductor device January 13, 2009
A method of manufacturing a semiconductor device having: forming a hetero semiconductor layer on at least the major surface of the semiconductor substrate body of a first conductivity type; etching the hetero semiconductor layer selectively by use of a mask layer having openings in w
7436004 Semiconductor device October 14, 2008
An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing through the semico
7378325 Semiconductor device and manufacturing method thereof May 27, 2008
A high voltage semiconductor device having a high current gain hFE is formed with a collector region (20) of a first conduction type, an emitter region (40) of the first conduction type, and a base region (30) of a second conduction type opposite to the first conduction type located
7217950 Insulated gate tunnel-injection device having heterojunction and method for manufacturing the sa May 15, 2007
The present invention-provides a tunnel-injection device which encompasses, a reception layer made of a first semiconductor, a barrier-forming layer made of a second semiconductor having a bandgap-narrower than the first semiconductor, being in metallurgical contact with the receptio
7183575 High reverse voltage silicon carbide diode and method of manufacturing the same high reverse vol February 27, 2007
A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is different from that of the
7173307 Semiconductor device and manufacturing method thereof February 6, 2007
An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the
7151280 Semiconductor device December 19, 2006
A semiconductor device includes a heterojunction semiconductor region 9, which forms a heterojunction with a drain region 2. The heterojunction semiconductor region 9 is connected to a source electrode 7, and has a band gap different from a band gap of a semiconductor substrate const
7138668 Heterojunction diode with reduced leakage current November 21, 2006
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a he
7071536 Semiconductor device and manufacturing method thereof July 4, 2006
A high voltage semiconductor device having a high current gain hFE is formed with a collector region (20) of a first conduction type, an emitter region (40) of the first conduction type, and a base region (30) of a second conduction type opposite to the first conduction type located
7061027 Semiconductor device with heterojunction June 13, 2006
An aspect of the present invention provides a semiconductor device that includes a semiconductor base made of a first semiconductor material of a first conductivity type, a hetero-semiconductor region forming a heterojunction with the semiconductor base and made of a second semicondu
7005704 Insulated gate drive semiconductor device February 28, 2006
An aspect of the present invention provides a semiconductor device includes that a drain region of a first conductivity type formed in a semiconductor substrate, a source region of the first conductivity type, an insulating film in contact with the source region, a gate electrode ins
6737677 Wide bandgap semiconductor device and method for manufacturing the same May 18, 2004
The present invention provides a wide bandgap semiconductor device encompassing: (a) a drift layer of a first conductivity type made of a wide bandgap semiconductor material; (b) a body region of a second conductivity type made of the wide bandgap semiconductor material, disposed at
5939754 Power MOSFET having a drain heterojunction August 17, 1999
There is provided a power MOSFET in which a plurality of base regions are formed on a surface of a semiconductor region serving as a drain region, convex drain regions are formed on the semiconductor region, and a part of the convex drain regions is formed of wide bandgap semiconductor h
5682048 Groove-type semiconductor device October 28, 1997
A semiconductor structure having a plurality of drivers in and on the same semiconductor substrate is arranged to increase the density of integrated components and reduce the on resistance. The semiconductor structure employs a double layer interconnection structure having source and dra
5675169 Motor driving circuit with surge detection/protection and its structure in a semiconductor devic October 7, 1997
A semiconductor device having a surge input detecting circuit is provided with the driving circuit for, for example, reversible motor. To prevent MOS power transistors constituting the power driving circuit from their destructive breakdowns (failures), when the surge input detecting circ
5635742 Lateral double-diffused mosfet June 3, 1997
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive
5192989 Lateral DMOS FET device with reduced on resistance March 9, 1993
A lateral DMOS FET device which has a small on resistance. The device includes a cell structure formed by a plurality of unit cells, each unit cell including: a source region of first conduction type formed on one side of a substrate of first conduction type; a channel region of second










 
 
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