| Patent Number |
Title Of Patent |
Date Issued |
| 6360687 |
Wafer flattening system |
March 26, 2002 |
| A wafer flattening system is provided to consecutively and automatically remove the natural oxide film from a wafer and flatten and smooth the wafer so as to improve the surface roughness of the wafer and improve the work efficiency. A step of immersing the wafer in an aqueous solution o |
| 5112645 |
Phototreating method and apparatus therefor |
May 12, 1992 |
| A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece |
| 4878995 |
Method of dry etching and apparatus for use in such method |
November 7, 1989 |
| This invention provides a method of dry etching and an apparatus for use with such method capable of producing a multi-layered structure having substantially a vertical wall and high selectivity. There is provided a method of the dry etching that disposing an object having a first film a |
| 4844774 |
Phototreating method and apparatus therefor |
July 4, 1989 |
| A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece |
| 4838978 |
Dry etching apparatus |
June 13, 1989 |
| A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum |
| 4786361 |
Dry etching process |
November 22, 1988 |
| A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged o |
| 4698238 |
Pattern-forming method |
October 6, 1987 |
| A pattern is formed by providing a reaction field in which a photo-induced reaction proceeds when a substrate is irradiated with light so as to form a pattern on the substrate, and setting, in the reaction field, conditions for establishing a nonlinear relationship between the intensity |
| 4668337 |
Dry-etching method and apparatus therefor |
May 26, 1987 |
| A dry-etching method for performing anisotropic etching on a semiconductor substrate by employing an etching gas together with a film-forming gas while irradiating light or an X-ray on the semiconductor substrate. In this method at least one of the etching gas or film-forming gas is exci |
| 4642171 |
Phototreating apparatus |
February 10, 1987 |
| A phototreating apparatus has a vacuum container for storing a solid material, a gas inlet for introducing a photoreactive gas into the container, and a light source for radiating into the container, light having a specific wavelength such that it causes a photoreaction of the photor |
| 4529475 |
Dry etching apparatus and method using reactive gases |
July 16, 1985 |
| A dry etching apparatus is disclosed which uses reactive gases and which is capable of achieving anisotropic etching without causing radiation damage to a workpiece to be selectively etched. The workpiece is placed in a vacuum container into which two feedstock gases are introduced. One |
| 4526643 |
Dry etching apparatus using reactive ions |
July 2, 1985 |
| A dry etching apparatus using reactive ions is disclosed. A housing in which a workpiece is etched is provided with a cathode electrode on which the workpiece is mounted, and an anode electrode arranged opposite the cathode electrode. An etching gas is supplied to the housing, and pressu |
| 4492610 |
Dry Etching method and device therefor |
January 8, 1985 |
| A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma o |
| 4431473 |
RIE Apparatus utilizing a shielded magnetron to enhance etching |
February 14, 1984 |
| A dry etching apparatus for semiconductor wafers has a decompression vessel, the inside of which is divided by a separating wall into a discharge room and a shield room. The discharge room has a pair of elecrodes between which RF electric power is applied. One of the electrodes is pl |
| 4277304 |
Ion source and ion etching process |
July 7, 1981 |
| An ion source suitably used for an etching process among manufacturing processes for e.g. semiconductor devices, comprising a vacuum container, an anode disposed in the vacuum container, a cathode having one or more looped slits formed opposite said anode, and one or more permanent magne |
| 4252595 |
Etching apparatus using a plasma |
February 24, 1981 |
| An etching device uses a gas activated by a plasma for etching semiconductor elements. The apparatus includes etching chamber in which semiconductor elements are horizontally held by a supporting plate or conveyer and etched. The etching gas introduced from the upper side of the semi |
| 4192706 |
Gas-etching device |
March 11, 1980 |
| A gas etching device comprises a vacuum vessel provided with a means for supplying into the vacuum vessel a gas containing therein oxygen atoms and a gas containing therein fluorine atoms, an etching gas-producing region provided within the vacuum vessel and provided with an exciting mea |
| 4175235 |
Apparatus for the plasma treatment of semiconductors |
November 20, 1979 |
| Apparatus for the plasma treatment of semiconductors comprises a plasma generating section, means for introducing a gas suitable for plasma treatment into the plasma generating section, high-frequency discharging means for activating the gas contained in said plasma generating section, |
| 4160690 |
Gas etching method and apparatus |
July 10, 1979 |
| A gas etching apparatus comprising an etching gas-producing chamber; means for introducing into said chamber a mixture of a gas containing fluorine atoms and a gas containing oxygen atoms; means for activating the gas mixture received in the etching gas-producing chamber; an etching cham |
| 4151034 |
Continuous gas plasma etching apparatus |
April 24, 1979 |
| A continuous gas plasma etching apparatus comprising a reaction chamber having an inlet means and an outlet means, an activation portion disposed at a distance from said reaction chamber, a distributor means for uniformly supplying said reaction chamber with an activated gas produced |
| 4123663 |
Gas-etching device |
October 31, 1978 |
| A gas etching device comprises a vacuum vessel provided with a means for supplying into the vacuum vessel a gas containing therein oxygen atoms and a gas containing therein fluorine atoms, an etching gas-producing region provided within the vacuum vessel and provided with an exciting mea |
