| Patent Number |
Title Of Patent |
Date Issued |
| RE33193 |
Ion beam processing apparatus and method of correcting mask defects |
April 3, 1990 |
| Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low |
| 7456428 |
Manufacturing method of semiconductor film and image display device |
November 25, 2008 |
| A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crysta |
| 7397831 |
Laser annealing apparatus and annealing method of semiconductor thin film using the same |
July 8, 2008 |
| A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the |
| 7326623 |
Method of manufacturing display device |
February 5, 2008 |
| Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined are |
| 7258586 |
Method for manufacturing an organic electroluminescence display |
August 21, 2007 |
| When any of pixels is not lit in an organic EL display having an organic EL layer between a first electrode and a second electrode, an organic layer of the pixel is observed. If the organic layer of the pixel contains foreign matter, the second electrode is separated into a region in |
| 7253864 |
Active matrix display device with active element including a semiconductor film formed of an agg |
August 7, 2007 |
| A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. |
| 7202144 |
Manufacturing method of semiconductor film and image display device |
April 10, 2007 |
| A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crysta |
| 7193693 |
Apparatus for manufacturing flat panel display devices |
March 20, 2007 |
| A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined |
| 7183148 |
Display panel and method for manufacturing the same |
February 27, 2007 |
| An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width |
| 7132343 |
Method and apparatus for manufacturing display panel |
November 7, 2006 |
| The whole surface of an insulating substrate having an amorphous silicon film formed thereon is scanned/irradiated with a solid-state pulsed laser beam shaped linearly or rectangularly, to form a uniform fine poly-crystalline silicon film for forming a pixel region. The periphery of |
| 7129124 |
Display device, process of fabricating same, and apparatus for fabricating same |
October 31, 2006 |
| The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the tr |
| 7023500 |
Display device with active-matrix transistor having silicon film modified by selective laser irr |
April 4, 2006 |
| An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified |
| 6943086 |
Laser annealing apparatus, TFT device and annealing method of the same |
September 13, 2005 |
| A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have |
| 6753253 |
Method of making wiring and logic corrections on a semiconductor device by use of focused ion be |
June 22, 2004 |
| Herein disclosed are a variety of techniques relating to the wiring and logic corrections on a chip by making use of the focused ion beam (which is shortly referred to as "FIB") or the laser selection metal CVD. The time periods for the wiring corrections and for debugging and developing |
| 5883437 |
Method and apparatus for inspection and correction of wiring of electronic circuit and for manuf |
March 16, 1999 |
| A method and apparatus for inspecting wirings of an electronic circuit substrate to detect a defect in the wiring and for enabling correction thereof. The inspection method and apparatus include electrostatically coupling at least one electrode to a wiring pattern, applying a time va |
| 5832595 |
Method of modifying conductive lines of an electronic circuit board and its apparatus |
November 10, 1998 |
| A method of modifying an electronic circuit board by performing disconnection or connection of conductive lines at a specified or an arbitrary position of the conductive lines of the electronic circuit board thereby changing an electric circuit and of completely modifying an open pat |
| 5824598 |
IC wiring connecting method using focused energy beams |
October 20, 1998 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5497034 |
IC wiring connecting method and apparatus |
March 5, 1996 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5472507 |
IC wiring connecting method and apparatus |
December 5, 1995 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5229569 |
Laser machining apparatus and method of the same |
July 20, 1993 |
| A laser machining apparatus includes a laser beam source, such as of excimer laser, which produces a laser beam to be projected on a work piece or a sample, first and second illumination light sources which have wavelengths substantially equal to the wavelength of the laser beam and |
| 5208437 |
Method of cutting interconnection pattern with laser and apparatus thereof |
May 4, 1993 |
| In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam having a pulse width of 10.sup.-9 second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device, such as a link used for redunda |
| 5182231 |
Method for modifying wiring of semiconductor device |
January 26, 1993 |
| The wiring of a semiconductor device having a multilayer interconnection on a semiconductor substrate is modified. A plurality of fine holes are formed on an insulation film by the radiation of a converged energy beam to expose selected ones of the internal lines of the underlying wiring |
| 5086015 |
Method of etching a semiconductor device by an ion beam |
February 4, 1992 |
| A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning |
| 5026664 |
Method of providing a semiconductor IC device with an additional conduction path |
June 25, 1991 |
| A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for |
| 4900695 |
Semiconductor integrated circuit device and process for producing the same |
February 13, 1990 |
| The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a p |
| 4868068 |
IC wiring connecting method and resulting article |
September 19, 1989 |
| A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a l |
| 4795720 |
Method for producing semiconductor devices and cutting fuses |
January 3, 1989 |
| Herein disclosed are a method of producing a semiconductor device. Especially in a device constructed to have a defective circuit replaced by a redundant circuit, after a fuse is cut by exposure to a laser beam, a portion to be fused is irradiated in a predetermined gas atmosphere with |
| 4687939 |
Method and apparatus for forming film by ion beam |
August 18, 1987 |
| An ion beam apparatus which comprises an enclosure defining a chamber of high vacuum. A crucible for producing vapor of a material, ionizing means, ion accelerating means, and a substrate to be deposited with the vaporized material to thereby form a film thereon are disposed within the c |
| 4609809 |
Method and apparatus for correcting delicate wiring of IC device |
September 2, 1986 |
| The invention discloses a method and apparatus for correcting a device characterized in that an ion beam is extracted from an ion source having high luminance such as a liquid metal ion source or the like, the ion beam is then converged to a delicate spot by use of a charged particle opt |
| 4609566 |
Method and apparatus for repairing defects on a photo-mask pattern |
September 2, 1986 |
| A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the ch |
| 4566765 |
Apparatus for summing several ring-shape laser beams |
January 28, 1986 |
| A light source apparatus comprises one laser oscillator, at least one other laser oscillator, a light converter for converting a laser beam emitted from the other laser oscillator into a ring-shaped laser beam, and a reflecting mirror for passing a laser light beam emitted from the one |
| 4510222 |
Photomask with corrected white defects |
April 9, 1985 |
| A photomask with white defects that have corrected with a film comprising a mixture of silver and tantalum oxide. The film has a good resistance to chemicals. |
| 4503329 |
Ion beam processing apparatus and method of correcting mask defects |
March 5, 1985 |
| Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low |
| 4463073 |
Method and apparatus for redressing defective photomask |
July 31, 1984 |
| A method and apparatus for repairing defect portions of a photomask. A complex material from which a light shading material can be deposited is applied over the photomask. A white (blank) defect region is irradiated with a continuous wave laser light beam projected in a slit-like light |
| 4444801 |
Method and apparatus for correcting transparent defects on a photomask |
April 24, 1984 |
| A method and apparatus for correcting transparent defects on a photomask are disclosed. A metal-organic complex solution is applied to a transparent defect portion and its periphery on the photomask. The transparent defect portion is then exposed to a visible ray or ultraviolet ray t |
| 4190759 |
Processing of photomask |
February 26, 1980 |
| A laser beam of a pulse width 10 to 20 nanoseconds is irradiated and scanned relatively and two-dimensionally on a metal thin film formed on a transparent substrate from the transparent substrate side and through the transparent substrate with a superposition number of laser beam spots s |
