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Inventor:
Hong; Sungkwon C.
Address:
Boise, ID
No. of patents:
25
Patents:












Patent Number Title Of Patent Date Issued
8077238 Wide dynamic range sensor having a pinned diode with multiple pinned voltages December 13, 2011
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual
7830412 Method and apparatus for shielding correction pixels from spurious charges in an imager November 9, 2010
A barrier for isolating the dark correction pixels from spurious charges within an image sensor. The barrier comprises a charge absorbing region in a substrate electrically connected to a voltage source terminal. The charge absorbing region completely surrounds the dark correction region
7829832 Method for operating a pixel cell using multiple pulses to a transistor transfer gate November 9, 2010
Methods for operating a pixel cell include efficient transferring of photo-charges using multiple pulses to a transistor transfer gate during a charge integration period for an associated photosensor. The pixel cell can be operated with efficient transfer characteristics in either normal
7777169 Imager pixel with capacitance circuit for boosting reset voltage August 17, 2010
A pixel cell in which a capacitance is coupled between a storage node and a row select transistor and another capacitance is coupled between a storage node and a voltage supply or ground source potential to boost a reset voltage.
7772627 Image sensor with floating diffusion gate capacitor August 10, 2010
Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixe
7718459 Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region an May 18, 2010
The exemplary embodiments provide an imager with dual conversion gain charge storage and thus, improved dynamic range. A dual conversion gain element (e.g., Schottky diode) is coupled between a floating diffusion region and a respective capacitor. The dual conversion gain element swi
7687832 Method of fabricating a storage gate pixel design March 30, 2010
A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shutter gate is formed
7638825 Imaging with gate controlled charge storage December 29, 2009
A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge
7635624 Dual gate structure for imagers and method of formation December 22, 2009
A device, as in an integrated circuit, includes diverse components such as transistors and capacitors. After conductive layers for all types of components are produced, a silicide layer is provided over conductive layers, reducing resistance. The device can be an imager in which pixels
7517717 Wide dynamic range sensor having a pinned diode with multiple pinned voltages April 14, 2009
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual
7498623 Image sensor with floating diffusion gate capacitor March 3, 2009
Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixe
7446807 Imager pixel with capacitance for boosting reset voltage November 4, 2008
A pixel cell in which a capacitance is coupled between a storage node and a row select transistor and another capacitance is coupled between a storage node and a voltage supply or ground source potential to boost a reset voltage.
7394056 Image sensor having pinned floating diffusion diode July 1, 2008
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene int
7344937 Methods and apparatus with silicide on conductive structures March 18, 2008
Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not contaminate other components such as the photoconversion devices of an imager integrated circui
7279672 Image sensor having pinned floating diffusion diode October 9, 2007
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene int
7238977 Wide dynamic range sensor having a pinned diode with multiple pinned voltages July 3, 2007
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual
7238544 Imaging with gate controlled charge storage July 3, 2007
A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge
7164161 Method of formation of dual gate structure for imagers January 16, 2007
A device, as in an integrated circuit, includes diverse components such as transistors and capacitors. After conductive layers for all types of components are produced, a silicide layer is provided over conductive layers, reducing resistance. The device can be an imager in which pixels
7153719 Method of fabricating a storage gate pixel design December 26, 2006
A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shutter gate is formed
7119322 CMOS image sensor having pinned diode floating diffusion region October 10, 2006
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene int
7115923 Imaging with gate controlled charge storage October 3, 2006
A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge
7115855 Image sensor having pinned floating diffusion diode October 3, 2006
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene int
7078746 Image sensor with floating diffusion gate capacitor July 18, 2006
Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixe
7012000 Methods of forming silicide on conductive structures March 14, 2006
Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not contaminate other components such as the photoconversion devices of an imager integrated circui
6900507 Apparatus with silicide on conductive structures May 31, 2005
Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not contaminate other components such as the photoconversion devices of an imager integrated circui










 
 
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