| Patent Number |
Title Of Patent |
Date Issued |
| 8193587 |
Manufacturing method of semiconductor device, manufacturing method of display device, semiconduc |
June 5, 2012 |
| A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a |
| 8058652 |
Semiconductor device used as electro-optical device having channel formation region containing f |
November 15, 2011 |
| A semiconductor device having an island semiconductor film which is a channel formation region and a semiconductor film which is a source or drain region being in contact with a side face of the island semiconductor film, and a method for manufacturing the semiconductor device are di |
| 7799620 |
Manufacturing method of semiconductor device, manufacturing method of display device, semiconduc |
September 21, 2010 |
| A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a |
| 7651896 |
Method for manufacturing semiconductor device |
January 26, 2010 |
| An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semicondu |
| 7648861 |
Method of fabricating a semiconductor device including separately forming a second semiconductor |
January 19, 2010 |
| The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput wher |
| 7112982 |
Method for evaluating semiconductor device |
September 26, 2006 |
| It is an object of the present invention to provide a method for evaluating a semiconductor device including a semiconductor, an insulator, and a conductor.The present invention has a first step of applying a voltage to a conductor to measure a current value, a second step of dividin |
| 7060511 |
Evaluation method of a field effect transistor |
June 13, 2006 |
| The present invention provides a method for estimating resistance value of an LDD region that works in an actual FET and forming an optimum LDD region. Therefore, the present invention provides an FET in which OFF (leakage) current is reduced and has superior switching characteristics. |
