| Patent Number |
Title Of Patent |
Date Issued |
| 7247548 |
Doping method and semiconductor device using the same |
July 24, 2007 |
| The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a |
| 7138688 |
Doping method and semiconductor device fabricated using the method |
November 21, 2006 |
| A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fa |
| 6680411 |
Carborane supercluster and method of producing same |
January 20, 2004 |
| A carborane supercluster consisting of carborane (C.sub.2 B.sub.10 H.sub.12) as its constituent unit expressed as a molecular formula C.sub.2m B.sub.10m H.sub.12m-x, where x is a positive integer (i.e., x=1, 2, 3, . . . ) and m is an integer greater than unity (i.e., m=2, 3, . . . ). |
| 6540972 |
Carbon material and method of preparing the same |
April 1, 2003 |
| A graphite having geometrically shaped holes limited to the top atomic layer such as circles, polygons and combinations thereof, and a method of preparing a graphite having geometrically shaped holes such as circles, polygons and combinations thereof where the geometrically shaped holes |
| 6083624 |
Carbon material and method of preparing the same |
July 4, 2000 |
| A graphite having geometrically shaped holes limited to the top atomic layer such as circles, polygons and combinations thereof, and a method of preparing a graphite having geometrically shaped holes such as circles, polygons and combinations thereof where the geometrically shaped holes |
| 5925465 |
Carbon material originating from graphite and method of producing same |
July 20, 1999 |
| A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in FIG. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force |
| 5698175 |
Process for purifying, uncapping and chemically modifying carbon nanotubes |
December 16, 1997 |
| Disclosed is a process for purifying carbon nanotubes which has steps of 1) mixing carbon nanotubes which accompany carbon impurities with a reagent selected from a group consisting of oxidation agents, nitration agents and sulfonation agents in liquid phase, 2) reacting the carbon nanot |
| 5641466 |
Method of purifying carbon nanotubes |
June 24, 1997 |
| A mixture of carbon nanotubes and impurity carbon materials, which include carbon nanoparticles and may possibly include amorphous carbon, is purified into carbon nanotubes of high purity by utilizing a significant difference in oxidizability between the nanotubes and the nanoparticles. |
| 5626812 |
Method of producing carbon material by bending at least one carbon atom layer of graphite |
May 6, 1997 |
| A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in FIG. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force |
