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Hishiya; Shingo
Nirasaki, JP
No. of patents:

Patent Number Title Of Patent Date Issued
8288241 Semiconductor device, method of manufacturing the same and adsorption site blocking atomic layer October 16, 2012
To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectr
8216378 Reaction tube and heat processing apparatus for a semiconductor process July 10, 2012
A reaction tube for a semiconductor process for performing a heat process on a plurality of target objects stacked at intervals under a vacuum state is integrally made of an electrically insulating and heat-resistant material. The reaction tube includes a cylindrical sidewall that has a
7208428 Method and apparatus for treating article to be treated April 24, 2007
A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas into the reaction tube 2; and a second gas supply pipe 14 f
7064084 Oxide film forming method June 20, 2006
To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a pro
6821566 Method and apparatus for forming insulating film containing silicon oxy-nitride November 23, 2004
A method of forming an insulating film containing silicon oxy-nitride includes a loading step, temperature raising step, oxidation step, cycle purge step, and annealing step, in this order. The temperature raising step is performed while supplying nitrogen gas and oxygen gas for prev

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