| Patent Number |
Title Of Patent |
Date Issued |
| 7623003 |
Drive method for driving element having capacity impedance, drive device, and imaging device |
November 24, 2009 |
| Three devices such as electric charge-coupled devices are each included in one of three phase impedance circuits composing a 3-phase LC resonance circuit as a device having a capacitive impedance. A driver circuit applies either of a logic level of 0, a high-impedance level or a logic |
| 7616246 |
Solid-state imaging device with enhanced pixel thinning out configuration, method for driving sa |
November 10, 2009 |
| A solid-state imaging device includes an imaging unit, a charge control unit, and a horizontal transfer unit. The imaging unit includes a plurality of pixels arranged into a matrix for performing photoelectric conversion, and a plurality of vertical transfer units arranged in columns |
| 7554593 |
Solid state imaging device |
June 30, 2009 |
| A solid state imaging device including a plurality of photo diodes disposed in a matrix shape, a vertical transfer unit disposed along each vertical column of the photo diodes, and a horizontal transfer unit in which a predetermined number, two or more, of adjacent vertical transfer |
| 6559889 |
Solid-state imaging apparatus with lowered overflow drain bias, method for driving same and came |
May 6, 2003 |
| In a CCD imaging device in which sensor sections have the vertical overflow drain (OFD) structure, a substrate bias control signal is applied to the base of a bipolar transistor via a resistor to turn on the transistor at least during a signal charge readout period. As a result, the base |
| 6400404 |
Solid-state imaging device and camera using the same |
June 4, 2002 |
| Control gate sections capable of prohibiting transfer from vertical CCDs to a horizontal CCD of signal charges generated in selected regions of an imaging area in the horizontal direction are provided between the vertical CCDs to the horizontal CCD. This configuration allows reading of s |
| 6198138 |
Analogue misfet with threshold voltage adjuster |
March 6, 2001 |
| A threshold voltage or a channel potential of a MIS device can be set in an analogue fashion. A MIS device includes a multi-layer structure having a gate insulating film in which an oxide film, a nitride film and an oxide film are laminated in that order. The threshold voltage or channel |
| 6104072 |
Analogue MISFET with threshold voltage adjuster |
August 15, 2000 |
| A threshold voltage or a channel potential of a MIS device can be set in an analogue fashion. A MIS device includes a multi-layer structure having a gate insulating film in which an oxide film, a nitride film and an oxide film are laminated in that order. The threshold voltage or channel |
| 6084273 |
Analogue misfet with threshold voltage adjuster |
July 4, 2000 |
| A threshold voltage or a channel potential of a MIS device can be set in an analogue fashion. A MIS device includes a multi-layer structure having a gate insulating film in which an oxide film, a nitride film and an oxide film are laminated in that order. The threshold voltage or channel |
| 5615242 |
Charge transfer apparatus with output gate and driving method thereof |
March 25, 1997 |
| A charge transfer apparatus which is capable of reliably improving the transfer efficiency of an output gate section while preventing the occurrence of coupling to output waveforms. A two-phase driving-type charge transfer apparatus is constructed as follows. Transfer clock .phi.H2 u |
| 5426317 |
Frame interline transfer CCD imager |
June 20, 1995 |
| A frame interline transfer CCD imager is so adapted that signal charges from the photosensor are read into a vertical transfer unit and are transferred at a high transfer rate from the vertical transfer unit to a storage section. The charges from each photosensor are drained during the |
| 5393997 |
CCD having transfer electrodes of 3 layers |
February 28, 1995 |
| A solid state imager device comprises a plurality of pixels arranged in rows and columns, each of the pixels consisting of a light sensing element and a vertical transfer portion adjacent to the light sensing element, the vertical transfer portion having three gate portions such as a fir |
| 5373179 |
Protective device for semiconductor IC |
December 13, 1994 |
| A protective circuit protects a plurality of protected portions having different withstand voltages and operation voltages of an active portion of a CCD solid state imaging device or the like by protective elements (e.g., transistors). The respective protected portions can be protected i |
| 5317408 |
Horizontally aligned image pickup for CCD image sensor |
May 31, 1994 |
| A charge coupled device image sensor is comprised of an imaging section including a plurality of photoelectric converting sections arrayed in a matrix configuration for generating signal charges and a plurality of horizontal shift registers arranged between the horizontal rows of the |
| 5291294 |
Charge coupled device imager with horizontal charge transfer sections in an imaging section |
March 1, 1994 |
| A charge coupled device imager has an imaging section comprising a plurality of photoelectric converting sections and a plurality of horizontal charge transfer sections arranged in a matrix configuration divided into two sections. Each of the photoelectric converting sections is surr |
| 5251038 |
Solid state imager with a condenser lens on a photo sensor |
October 5, 1993 |
| The present invention is directed to a CCD solid state imager in which a utilization efficiency of light and a sensitivity of a sensitive unit (pixel) can be increased and a smear can be reduced by improving a shape of a micro-condenser lens formed on the sensitive unit. In the CCD solid |
| 5239192 |
Horizontal charge transfer register |
August 24, 1993 |
| A horizontal charge transfer register has an array of charge transfer sections for transferring signal charges in a charge transfer direction, the charge transfer sections including a final charge transfer section. A floating diffusion region is connected to the final charge transfer |
| 5182648 |
Charge coupled device imager with horizontal charge transfer section in an imaging section |
January 26, 1993 |
| A charge coupled device imager has an imaging section comprising a plurality of photoelectric converting sections and a plurality of horizontal charge transfer sections. Each of the photoelectric converting section is surrounded with a channel stop region for isolating each other and |
| 4856033 |
Solid state imager device with exposure control with noise reduction |
August 8, 1989 |
| A solid state imager has a substrate with a plurality of light receiving areas, with vertical registers to transfer charges accumulated in the light receiving areas either through the vertical registers to a horizontal register section and an output terminal, or to a drain region. Th |
