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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Hirai; Toshio
Address:
Sendai, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
6592798 Method for preparing eutectic ceramics July 15, 2003
A method for advantageously producing sintered eutectic ceramics having a homogenous and dense structure, in particular, a eutectic containing a rare earth aluminate compound. The method allows eutectic powder of alumina and a rare earth aluminate compound to stand at a temperature of
5164221 Forming die manufacturing method November 17, 1992
A manufacturing method of a forming die includes the steps of depositing a film of aluminum nitride or aluminum oxynitride on the forming surface of a forming member by passing an electric discharge through a mixture gas of halide of aluminum and a gas containing nitrogen atoms and hydro
5093156 Process for preparing carbon material March 3, 1992
A carbon material having oxidation resistance is prepared by forming a fi coating constituted mainly by carbon on the surface of a carbon/carbon composite by chemical vapor deposition, then forming on said first coating a second coating of a ceramic or both a ceramic and carbon by chemi
5093150 Synthesis method by plasma chemical vapor deposition March 3, 1992
A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of e
4985117 Method of manufacturing josephson junctions January 15, 1991
A method of manufacturing Josephson junctions includes steps of high Tc superconductor thin films on a substrates by chemical vapor deposition using raw materials, which includes at least yttrium, barium and copper, serving as vapor generating sources, and fabricating the high Tc sup
4340568 Super hard highly pure silicon nitrides and a process and apparatus for producing the same July 20, 1982
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 5,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of
4312924 Super hard highly pure silicon nitrides January 26, 1982
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of
4312923 Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same January 26, 1982
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of
4312921 Super hard-highly pure silicon nitrides January 26, 1982
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of
4279689 Process for producing super hard-highly pure silicon nitrides July 21, 1981
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of
4224296 Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same September 23, 1980
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of
4118539 Super hard-highly pure silicon nitrides having a preferred crystal face orientation October 3, 1978
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of










 
 
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