| Patent Number |
Title Of Patent |
Date Issued |
| 5485341 |
Power transistor overcurrent protection circuit |
January 16, 1996 |
| An overcurrent protection circuit for a power transistor for generating a main current in response to a gate drive voltage generated by a gate circuit. The overcurrent protection circuit includes a current detection circuit for detecting the main current flowing in the power transistor t |
| 5202578 |
Module-type semiconductor device of high power capacity |
April 13, 1993 |
| One of a pair of the module type semiconductor devices, signal input terminals are located on the other side of current output terminals with respect to current input terminals, and that, in the other of a pair of the module type semiconductor devices, signal input terminals are mounted |
| 5143865 |
Metal bump type semiconductor device and method for manufacturing the same |
September 1, 1992 |
| A semiconductor element is formed in a semiconductor substrate. An electrode wiring pattern which is connected to the active region and contains aluminum as the main component is formed on the main surface of said semiconductor substrate. A metal bump is formed on the electrode wirin |
| 5130784 |
Semiconductor device including a metallic conductor for preventing arcing upon failure |
July 14, 1992 |
| A semiconductor device includes a metallic electrode formed on a semiconductor substrate, and a metallic terminal formed on a metal base through an insulating material, in parallel to the metal electrode. A metallic wire electrically connects the metallic electrode to the metallic te |
| 5128277 |
Conductivity modulation type semiconductor device and method for manufacturing the same |
July 7, 1992 |
| A conductivity modulation type semiconductor device comprises a semiconductor anode substrate of a P type having two surfaces, a semiconductor substrate of an N type having two surfaces, the semiconductor substrate having a high impurity layer-like region on one surface thereof and a |
| 5124772 |
Insulated gate bipolar transistor with a shortened carrier lifetime region |
June 23, 1992 |
| In a power semiconductor device such as an IGBT, a fifth region of n conductivity type is provided. The fifth region is formed in a portion of a second region (drain region) contacting an insulating layer below the gate layer. The fifth region contacts a third region (base region) and ha |
| 4616144 |
High withstand voltage Darlington transistor circuit |
October 7, 1986 |
| A high withstand voltage Darlington transistor circuit is comprised of a Darlington transistor and a bypass circuit. This bypass circuit is comprised of a bypass transistor whose collector is connected to the base of an earlier stage transistor of the transistors which make up the Da |
| 4267557 |
Semiconductor device |
May 12, 1981 |
| A junction type semiconductor device, wherein a protective diode is formed in a part of the region consisting of a base region and a collector region. The device permits reducing the manufacturing cost of semiconductor elements, makes it possible to provide a smaller electric apparat |
