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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Hidaka; Hideto
Address:
Hyogo, JP
No. of patents:
250
Patents:


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Patent Number Title Of Patent Date Issued
RE38213 Data output circuit with reduced output noise August 12, 2003
A data output drive transistor is rendered conductive when the potential of an internal node attains an H level, whereby an output node is discharged to the level of ground potential. When the drive transistor is turned on, the output node is discharged to the level of ground potential a
RE34463 Semiconductor memory device with active pull up November 30, 1993
A MOS dynamic type RAM comprises memory cells (10), dummy cells (11), bit line pairs (BL, BL), word lines (WL), dummy word lines (DWL) and sense amplifiers (12). In a non-active cycle, the potentials of each pair of bit lines (BL, BL) are precharged at 1/2 of a supply potential V.sub.CC.
8000133 Thin film magnetic memory device capable of conducting stable data read and write operations August 16, 2011
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed
7978542 Thin film magnetic memory device writing data with bidirectional current July 12, 2011
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the
7948795 Thin film magnetic memory device including memory cells having a magnetic tunnel junction May 24, 2011
In the data read operation, a memory cell and a dummy memory cell are respectively coupled to two bit lines of a selected bit line pair, a data read current is supplied. In the selected memory cell column, a read gate drives the respective voltages on a read data bus pair, according to t
7928759 Low power consumption MIS semiconductor device April 19, 2011
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an
7885096 Thin film magnetic memory device writing data with bidirectional current February 8, 2011
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the
7741869 Low power consumption MIS semiconductor device June 22, 2010
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an
7733692 Thin film magnetic memory device capable of conducting stable data read and write operations June 8, 2010
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed
7719885 Thin film magnetic memory device having a highly integrated memory array May 18, 2010
Read word lines and write word lines are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell rows, and bit lines and reference voltage lines are provided corresponding to the respective MTJ memory cell columns. Adjacent MTJ memory cells share at least one
7616476 Thin film magnetic memory device suitable for drive by battery November 10, 2009
After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the digit line is connected to a ground voltage. Similarly, in order to feed data write curr
7567454 Thin film magnetic memory device capable of conducting stable data read and write operations July 28, 2009
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed
7558106 Thin film magnetic memory device writing data with bidirectional current July 7, 2009
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the
7521762 Semiconductor integrated circuit device operating with low power consumption April 21, 2009
Transistors having large gate tunnel barriers are used as transistors to be on in a standby state, MIS transistors having thin gate insulating films are used as transistors to be off in the standby state, and main and sub-power supply lines and main and sub-ground lines forming a hie
7505305 Thin film magnetic memory device having a highly integrated memory array March 17, 2009
Read word lines and write word lines are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell rows, and bit lines and reference voltage lines are provided corresponding to the respective MTJ memory cell columns. Adjacent MTJ memory cells share at least one
7489001 Magnetic thin-film memory device for quick and stable reading data February 10, 2009
An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by dividing a memory array in the column direction, it is possible to reduce signal propagation del
7486549 Thin film magnetic memory device having redundant configuration February 3, 2009
Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory cell columns with the normal memory cells. When there is at least one defect in the normal memory cells and/or the dummy memory cells, replacemen
7436717 Semiconductor device having mechanism capable of high-speed operation October 14, 2008
A semiconductor device comprises a memory cell block and a sense amplifier zone. A selection gate included in the sense amplifier zone is turned on for selectively coupling the memory cell block with the sense amplifier zone. Local drivers are dispersively arranged on a BLI wire transmit
7379366 Thin film magnetic memory device capable of conducting stable data read and write operations May 27, 2008
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed
7376005 Thin film magnetic memory device including memory cells having a magnetic tunnel junction May 20, 2008
In a tunneling magneto-resistance element, first and second free magnetic layers have a magnetization direction according to storage data. The first and second magnetic layers are arranged with an intermediate layer interposed therebetween. The intermediate layer is formed from a non
7355455 Low power consumption MIS semiconductor device April 8, 2008
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an
7315468 Thin film magnetic memory device for conducting data write operation by application of a magneti January 1, 2008
A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an operating voltage to the peripheral circuitry supply a power supply voltage and a ground volta
7313042 Thin film magnetic memory device having an improved read operation margin December 25, 2007
A data bus is precharged to a precharge voltage before data read operation. In the data read operation, the data bus thus precharged is electrically coupled to the same voltage as the precharge voltage through a selected memory cell. A driving transistor couples the data bus to a pow
7313017 Thin film magnetic memory device conducting read operation by a self-reference method December 25, 2007
In read operation, a current from a current supply transistor flows through a selected memory cell and a data line. Moreover, a bias magnetic field having such a level that does not destroy storage data is applied to the selected memory cell. By application of the bias magnetic field,
7295465 Thin film magnetic memory device reducing a charging time of a data line in a data read operatio November 13, 2007
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so tha
7292472 Memory device capable of stable data writing November 6, 2007
A memory device according to the present invention includes a memory cell array including a plurality of memory cells arranged therein, the memory cell array being divided into a plurality of regions each selectable independently of the others as an object for data writing, and further
7292470 Thin film magnetic memory device writing data with bidirectional current November 6, 2007
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the
7286431 Memory device capable of performing high speed reading while realizing redundancy replacement October 23, 2007
When normal bit lines BL3 and /BL3 are selected, spare bit lines SBL2 and /SBL2 are simultaneously selected, so that column select gates are placed in such a manner that these bit line pairs are connected to respective different read data bus pairs. The column select gates are distribute
7272036 Thin film magnetic memory device suitable for drive by battery September 18, 2007
After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the digit line is connected to a ground voltage. Similarly, in order to feed data write curr
7257020 Thin film magnetic memory device having redundant configuration August 14, 2007
Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory celf columns with the normal memory cells. When there is at least one defect in the normal memory cells and/or the dummy memory cells, replacemen
7256644 Semiconductor circuit device having hierarchical power supply structure August 14, 2007
Resistance elements are inserted into a main power supply line and a main ground line so that offset differential amplifiers receive voltages developed across the same. The differential amplifiers control transistors connected to a sub power supply line and a sub ground line. Thus, a
7254058 Thin film magnetic memory device provided with program element August 7, 2007
A program element has a magnetic layer electrically connected between first and second nodes. At least a portion of the magnetic layer forms a link portion designed to be blown with external laser irradiation. The magnetic layer is provided in the same layer as and with the same stru
7254057 Magnetic thin-film memory device for quick and stable reading data August 7, 2007
An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by dividing a memory array in the column direction, it is possible to reduce signal propagation del
7250796 Semiconductor device including an output circuit having a reduced output noise July 31, 2007
A data output drive transistor is rendered conductive when the potential of an internal node attains an H level, whereby an output node is discharged to the level of ground potential. When the drive transistor is turned on, the output node is discharged to the level of ground potential
7242060 Semiconductor memory device including an SOI substrate July 10, 2007
A semiconductor memory device includes a plurality of N and P channel MOS transistors. The plurality of MOS transistors are formed on an SOI (Silicon On Insulator) substrate. Each MOS transistor includes a source region, a drain region, and a body region located between the source re
7233537 Thin film magnetic memory device provided with a dummy cell for data read reference June 19, 2007
Normal memory cells and dummy cells are arranged continuously in a memory array. In a data read operation, first and second data lines are connected to the selected memory cell and the dummy cell, respectively, and are supplied with operation currents of a differential amplifier. An
7233519 Thin film magnetic memory device for conducting data write operation by application of a magneti June 19, 2007
A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an operating voltage to the peripheral circuitry supply a power supply voltage and a ground volta
7206222 Thin-film magnetic memory device executing data writing with data write magnetic fields in two d April 17, 2007
A tunneling magneto-resistance element forming an MTJ memory cell has an elongated form having an aspect ratio larger than one for stabilizing the magnetization characteristics. Bit lines and write word lines for carrying data write currents are arranged along short and long sides of
7154777 Memory device capable of stable data writing December 26, 2006
A memory device according to the present invention includes a memory cell array including a plurality of memory cells arranged therein, the memory cell array being divided into a plurality of regions each selectable independently of the others as an object for data writing, and further
7154776 Thin film magnetic memory device writing data with bidirectional current December 26, 2006
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the
7138684 Semiconductor memory device including an SOI substrate November 21, 2006
A semiconductor memory device includes a plurality of N and P channel MOS transistors. The plurality of MOS transistors are formed on an SOI (Silicon On Insulator) substrate. Each MOS transistor includes a source region, a drain region, and a body region located between the source re
7133310 Thin film magnetic memory device having a highly integrated memory array November 7, 2006
Read word lines and write word lines are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell rows, and bit lines and reference voltage lines are provided corresponding to the respective MTJ memory cell columns. Adjacent MTJ memory cells share at least one
7126845 Memory device capable of performing high speed reading while realizing redundancy replacement October 24, 2006
When normal bit lines BL3 and /BL3 are selected, spare bit lines SBL2 and /SBL2 are simultaneously selected, so that column select gates are placed in such a manner that these bit line pairs are connected to respective different read data bus pairs. The column select gates are distribute
7116595 Thin film magnetic memory device having a magnetic tunnel junction October 3, 2006
Bit lines and source lines are precharged to a power supply voltage before data read operation. In the data read operation, a corresponding bit line is coupled to a data bus as well as a corresponding source line is driven to a ground voltage only in the selected memory cell column. In t
7110288 Thin film magnetic memory device having redundant configuration September 19, 2006
Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory cell columns with the normal memory cells. When there is at least one defect in the normal memory cells and/or the dummy memory cells, replacemen
7102922 Thin film magnetic memory device capable of conducting stable data read and write operations September 5, 2006
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed
7085174 Semiconductor memory device with current driver providing bi-directional current to data write l August 1, 2006
First and second current drivers are connected to one end of corresponding first and second write bit lines, respectively, and the first and second write bit lines are directly connected, at the other end, to a common line. The first and second current drivers receive a first power suppl
7068067 Semiconductor circuit device having active and standby states June 27, 2006
A P channel MOS transistor and an N channel MOS transistor turned on/off in response to an input signal in an active state as well as an N channel MOS transistor connected between an output node and the N channel MOS transistor and turned on/off in response to a control signal are pr
7061796 Thin film magnetic memory device for programming required information with an element similar to June 13, 2006
A program unit includes two program cells having an electric resistance varying according to a magnetization direction thereof. These program cells are magnetized in the same direction in initial state, that is, non-program state. In program state, the magnetization direction of one
7057925 Thin film magnetic memory device conducting read operation by a self-reference method June 6, 2006
In read operation, a current from a current supply transistor flows through a selected memory cell and a data line. Moreover, a bias magnetic field having such a level that does not destroy storage data is applied to the selected memory cell. By application of the bias magnetic field,
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