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Inventor: Hibino; Yasuo
Address: Kawagoe, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6514425 |
Dry etching gas |
February 4, 2003 |
| Disclosed is fluorocarbon-based dry etching gas which is free of global environmental problems and a dry etching method using a plasma gas obtained therefrom. The dry etching gas includes a fluorinated ether of carbon, fluorine, hydrogen and oxygen and having 2-6 carbon atoms. |
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