| Patent Number |
Title Of Patent |
Date Issued |
| 7598153 |
Method and structure for fabricating bonded substrate structures using thermal processing to rem |
October 6, 2009 |
| A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embod |
| 7595499 |
Method and system for fabricating strained layers for the manufacture of integrated circuits |
September 29, 2009 |
| A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined nor |
| 7547609 |
Method and structure for implanting bonded substrates for electrical conductivity |
June 16, 2009 |
| A process for forming multi-layered substrates, e.g., silicon on silicon. The process includes providing a first substrate, which has a thickness of material to be removed. The thickness of material to be removed includes a first face region. The process includes joining the first face |
| 7479441 |
Method and apparatus for flag-less water bonding tool |
January 20, 2009 |
| Embodiments in accordance with the present invention relate to methods and apparatuses for bonding together substrates in a manner that suppresses the formation of voids between them. In a specific embodiment, a backside of each substrate is adhered to a front area of flexible, porous ch |
| 7470600 |
Method and device for controlled cleaving process |
December 30, 2008 |
| A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the dono |
| 7462526 |
Method for fabricating semiconductor devices using strained silicon bearing material |
December 9, 2008 |
| A method of manufacturing an integrated circuit on semiconductor substrates, e.g., silicon wafer. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. In a specific embodiment, the semiconductor substrate |
| 7427554 |
Manufacturing strained silicon substrates using a backing material |
September 23, 2008 |
| A method for forming a strained silicon layer of semiconductor material. The method includes providing a deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. A backing plate is coupled to the |
| 7410887 |
Controlled process and resulting device |
August 12, 2008 |
| A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concen |
| 7399680 |
Method and structure for implanting bonded substrates for electrical conductivity |
July 15, 2008 |
| A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Preferably, the first face |
| 7391047 |
System for forming a strained layer of semiconductor material |
June 24, 2008 |
| A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined nor |
| 7390724 |
Method and system for lattice space engineering |
June 24, 2008 |
| A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The s |
| 7378330 |
Cleaving process to fabricate multilayered substrates using low implantation doses |
May 27, 2008 |
| A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separatio |
| 7354815 |
Method for fabricating semiconductor devices using strained silicon bearing material |
April 8, 2008 |
| A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of material with a secon |
| 7351644 |
Thin handle substrate method and structure for fabricating devices using one or more films provi |
April 1, 2008 |
| A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the |
| 7348258 |
Method and device for controlled cleaving process |
March 25, 2008 |
| A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the dono |
| 7166520 |
Thin handle substrate method and structure for fabricating devices using one or more films provi |
January 23, 2007 |
| A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the |
| 7160790 |
Controlled cleaving process |
January 9, 2007 |
| A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concen |
| 7094666 |
Method and system for fabricating strained layers for the manufacture of integrated circuits |
August 22, 2006 |
| A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined nor |
| 7078317 |
Method and system for source switching and in-situ plasma bonding |
July 18, 2006 |
| A system for in-situ plasma treatment. The system has a processing chamber, e.g., plasma chamber. The system has a first susceptor coupled within the chamber and a second susceptor facing the first susceptor and being within the chamber. The system has one or more power sources. Pref |
| 6790747 |
Method and device for controlled cleaving process |
September 14, 2004 |
| A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the dono |
| 6526997 |
Dry cleaning method for the manufacture of integrated circuits |
March 4, 2003 |
| A method for manufacturing an integrated circuit device. The method includes retrieving an in process substrate comprising one or more particles from an input chamber, which is coupled to a chamber for a robot arm, which is maintained under a predetermined environment. The method mov |
| 6500732 |
Cleaving process to fabricate multilayered substrates using low implantation doses |
December 31, 2002 |
| A method of forming substrates. The method includes providing a donor substrate; and forming a cleave layer comprising a cleave plane on the donor substrate. The cleave plane extends from a periphery of the donor substrate through a center region of the substrate. The method also inc |
| 6500268 |
Dry cleaning method |
December 31, 2002 |
| A method for cleaning objects (e.g., wafers, integrated circuits, photonic devices, opto-electronic devices, piezoelectronic devices, microelectromechanical systems ("MEMS"), sensors, actuators, solar cells, flat panel displays (e.g., LCD, AMLCD), biological and biomedical devices) o |
| 6458723 |
High temperature implant apparatus |
October 1, 2002 |
| An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate hol |
| 6448152 |
Method and system for generating a plurality of donor wafers and handle wafers prior to an order |
September 10, 2002 |
| A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabrica |
