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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Heng; Kock Liang
Address:
Singapore, SG
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
8263439 Semiconductor device and method of forming an interposer package with through silicon vias September 11, 2012
A semiconductor device has a carrier for supporting the semiconductor device. A first semiconductor die is mounted over the carrier. A first dummy die having a first through-silicon via (TSV) is mounted over the carrier. The first semiconductor die and the first dummy die are encapsu
8125073 Wafer integrated with permanent carrier and method therefor February 28, 2012
A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within the wafer and the carrier wafer, an interconnect structure is formed. The interconnect s
8067308 Semiconductor device and method of forming an interconnect structure with TSV using encapsulant November 29, 2011
A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the substrate. A semiconductor die or component is mounted to the first interconnect structure. An encapsulant is deposited over th
8049328 Semiconductor device and method of forming an interconnect structure for 3-D devices using encap November 1, 2011
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited over the semiconductor die and first interconnect structure for structural support. A por
7880293 Wafer integrated with permanent carrier and method therefor February 1, 2011
A semiconductor device has a wafer for supporting the device and a conductive layer formed over a top surface of the wafer. A carrier wafer is permanently bonded over the conductive layer. Within the wafer and the carrier wafer, an interconnect structure is formed. The interconnect s
7838337 Semiconductor device and method of forming an interposer package with through silicon vias November 23, 2010
A semiconductor device is fabricated by providing a carrier for supporting the semiconductor device. A first semiconductor die is mounted to the carrier. The first semiconductor die has a contact pad. A first dummy die is mounted to the carrier. The first dummy die has a through-silicon
7741148 Semiconductor device and method of forming an interconnect structure for 3-D devices using encap June 22, 2010
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited over the semiconductor die and first interconnect structure for structural support. A por










 
 
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