| Patent Number |
Title Of Patent |
Date Issued |
| RE39452 |
TFT substrate with low contact resistance and damage resistant terminals |
January 2, 2007 |
| A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive |
| 7575960 |
Method for fabricating a thin film transistor matrix device |
August 18, 2009 |
| A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and c |
| 7330220 |
Liquid crystal display and method of fabricating the same |
February 12, 2008 |
| An MVA liquid crystal display which is high in brightness and has preferable characteristics is provided. Further, the MVA liquid crystal display with a preferable display quality as well as a larger margin in fabrication and a higher yield is provided. A first substrate having a fir |
| 7304703 |
Vertically-aligned (VA) liquid crystal display device |
December 4, 2007 |
| A vertically alignment mode liquid crystal display device having an improved viewing angle characteristic is disclosed. The disclosed liquid crystal display device uses a liquid crystal having a negative anisotropic dielectric constant, and orientations of the liquid crystal are vert |
| 7227606 |
Vertically-alligned (VA) liquid crystal display device |
June 5, 2007 |
| A vertical alignment mode liquid crystal display device having an improved viewing angle characteristic is provided. The liquid crystal display device uses a liquid crystal having a negative anisotropic dielectric constant, and orientations of the liquid crystal are vertical to subst |
| 7224421 |
Vertically-aligned (VA) liquid crystal display device |
May 29, 2007 |
| A vertical alignment mode liquid crystal display device having an improved viewing angle characteristic uses a liquid crystal having a negative anisotropic dielectric constant, and orientations of the liquid crystal are vertical to substrates when no voltage being applied, almost hor |
| 7167224 |
Vertically-aligned (VA) liquid crystal display device |
January 23, 2007 |
| A vertically alignment mode liquid crystal display device having an improved viewing angle characteristic is disclosed. The disclosed liquid crystal display device uses a liquid crystal having a negative anisotropic dielectric constant, and orientations of the liquid crystal are vert |
| 7136140 |
Liquid crystal display comprising a linear protrusion structure and an auxilliary protrusion str |
November 14, 2006 |
| An MVA liquid crystal display which is high in brightness and has preferable characteristics is provided. Further, the MVA liquid crystal display with a preferable display quality as well as a larger margin in fabrication and a higher yield is provided. A first substrate having a fir |
| 7075108 |
Thin film transistor matrix device |
July 11, 2006 |
| A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors arranged on the insulating substrate, and a plurality of picture element electrodes arranged on the insulating substrate in a matrix and connected to the thin film transistors. Th |
| 7034335 |
ITO film contact structure, TFT substrate and manufacture thereof |
April 25, 2006 |
| A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive |
| 6897479 |
ITO film contact structure, TFT substrate and manufacture thereof |
May 24, 2005 |
| A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive |
| 6767754 |
Thin film transistor matrix device and method for fabricating the same |
July 27, 2004 |
| A TFT matrix-type liquid crystal display device is used in laptop personal computers and wall televisions. On a transparent insulating substrate there are formed gate bus lines for commonly connecting the gates of thin film transistors, drain bus lines for commonly connecting the drains |
| 6724452 |
Vertically aligned (VA) liquid crystal display device |
April 20, 2004 |
| A vertical alignment mode liquid crystal display device having an improved viewing angle characteristic is provided. The liquid crystal display device uses a liquid crystal having a negative anisotropic dielectric constant, and orientations of the liquid crystal are vertical to subst |
| 6661488 |
Vertically-alligned (VA) liquid crystal display device |
December 9, 2003 |
| A vertically alignment mode liquid crystal display device having an improved viewing angle characteristic is disclosed. The disclosed liquid crystal display device uses a liquid crystal having a negative anisotropic dielectric constant, and orientations of the liquid crystal are vertical |
| 6509215 |
TFT substrate with low contact resistance and damage resistant terminals |
January 21, 2003 |
| A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive |
| 6406946 |
Thin film transistor matrix device and method for fabricating the same |
June 18, 2002 |
| A TFT matrix-type liquid crystal display device is used in laptop personal computers and wall TV's. On a transparent insulating substrate there are formed gate bus lines for commonly connecting the gates of thin film transistors, drain bus lines for commonly connecting the drains of the |
| 6297519 |
TFT substrate with low contact resistance and damage resistant terminals |
October 2, 2001 |
| A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive |
| 5795686 |
Pattern forming method and method of manufacturing liquid crystal display device |
August 18, 1998 |
| A pattern forming method of forming an overall pattern by connecting a plurality of pattern forming regions. The pattern forming method includes the steps of (A) forming, using a first exposure mask (RT11a), a plurality of latent images of first patterns arranged regularly in a photosens |
| 5742074 |
Thin film transistor matrix device and method for fabricating the same |
April 21, 1998 |
| A TFT matrix-type liquid crystal display device is used in laptop personal coputers and wall TV's. On a transparent insulating substrate there are formed gate bus lines for commonly connecting the gates of thin film transistors, drain bus lines for commonly connecting the drains of the |
