| Patent Number |
Title Of Patent |
Date Issued |
| 7554156 |
Semiconductor device having a field effect transistor using a high dielectric constant gate insu |
June 30, 2009 |
| In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the hi |
| 7495298 |
Insulating buffer film and high dielectric constant semiconductor device and method for fabricat |
February 24, 2009 |
| A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a s |
| 7488655 |
Method for fabricating semiconductor device |
February 10, 2009 |
| A metal film is deposited on a silicon region in a non-oxidizing atmosphere, after which the metal film is oxidized with radicals capable of oxidizing the metal film, such as oxygen radicals, to form a metal oxide film serving as a gate insulating film. |
| 7465618 |
Semiconductor device and method for fabricating the same |
December 16, 2008 |
| A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and |
| 7115533 |
Semiconductor device manufacturing method |
October 3, 2006 |
| The present invention provides a method of depositing a metal film on a substrate in a non-oxidizing atmosphere and then forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere. |
| 7094639 |
Method for fabricating semiconductor device |
August 22, 2006 |
| An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the |
| 6667246 |
Wet-etching method and method for manufacturing semiconductor device |
December 23, 2003 |
| A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching. |
| 6030667 |
Apparatus and method for applying RF power apparatus and method for generating plasma and appara |
February 29, 2000 |
| On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple spiral coil composed of four spiral coil elements connected in parallel via an impedance |
| 5838111 |
Plasma generator with antennas attached to top electrodes |
November 17, 1998 |
| A plasma generator operable in the UHF and VHF bands is adaptable to process substrates having different sizes and shapes. The device includes a plurality of electrodes, a power supply for providing a high frequency signal to at least one of the electrodes, and antennas attached to the |
| 5755888 |
Method and apparatus of forming thin films |
May 26, 1998 |
| An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemic |
| 5674366 |
Method and apparatus for fabrication of dielectric thin film |
October 7, 1997 |
| A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a subs |
| 5672252 |
Method and apparatus for fabrication of dielectric film |
September 30, 1997 |
| A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a subs |
