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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Hayakawa; Yukihiro
Address:
Atsugi, JP
No. of patents:
7
Patents:




Patent Number Title Of Patent Date Issued
6475563 Method for forming a thin film using a gas November 5, 2002
A method for forming a thin film on a substrate using a gas includes providing a substrate in a reaction chamber. A head for emitting a gas in the reaction chamber is disposed opposite the substrate. This step includes mounting a detachable gas liberating surface to the head so that
6004885 Thin film formation on semiconductor wafer December 21, 1999
A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reduc
5776255 Chemical vapor deposition apparatus July 7, 1998
A chemical vapor deposition apparatus comprises a starting material container holding a starting material in a liquid state, a starting gas generating container into which the liquid starting material is fed from the starting material container, a means for keeping constant the liquid
5653810 Apparatus for forming metal film and process for forming metal film August 5, 1997
An apparatus for forming metal film for forming metal films on substrates comprises a reaction chamber, a plurality of first and second electrodes alternately arranged in the reaction chamber, an energy supply means that supplies to the first and second electrodes an electrical energy fo
5580822 Chemical vapor deposition method December 3, 1996
A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reduc
5447568 Chemical vapor deposition method and apparatus making use of liquid starting material September 5, 1995
A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reduc
5376231 Substrate for recording head, recording head and method for producing same December 27, 1994
A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting


 
 
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