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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Hatori; Makoto
Address:
Fussa, JP
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
8129784 Semiconductor device March 6, 2012
The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n.sup.+-type source region of an LDMOSFET, and no such metal silicide film is formed on an n.sup.--type offset drain region, an n-type offset
7994567 Semiconductor device and a method of manufacturing the same August 9, 2011
To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the
7791131 Semiconductor device and a method of manufacturing the same September 7, 2010
To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the
7510941 Semiconductor device and manufacturing method of the same March 31, 2009
The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n.sup.+-type source region of an LDMOSFET, and no such metal silicide film is formed on an n.sup.--type offset drain region, an n-type offset
7176520 Semiconductor device and a method of manufacturing the same February 13, 2007
To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the










 
 
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