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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Hatakeyama; Jun
Address:
Joetsu, JP
No. of patents:
56
Patents:


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Patent Number Title Of Patent Date Issued
8574817 Positive resist composition and patterning process November 5, 2013
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1), (2) or (3) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a
8268528 Resist composition and patterning process September 18, 2012
A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under th
8252504 Polymer, resist composition, and patterning process August 28, 2012
A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion
8247166 Double patterning process August 21, 2012
A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second
8216774 Patterning process July 10, 2012
A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation thr
8211618 Positive resist composition and patterning process July 3, 2012
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern pro
8192921 Patterning process June 5, 2012
A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation thr
8158330 Resist protective coating composition and patterning process April 17, 2012
A protective coating composition comprising a copolymer of an alkali-soluble (.alpha.-trifluoromethyl) acrylate and a norbornene derivative as a base polymer, optionally in admixture with a second polymer containing sulfonic acid and/or sulfonic acid amine salt in repeat units is app
8129100 Double patterning process March 6, 2012
Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and
8129099 Double patterning process March 6, 2012
Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PE
8105764 Patterning process January 31, 2012
A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist fi
8105760 Patterning process and pattern surface coating composition January 31, 2012
A pattern is formed by applying a first positive resist composition comprising a polymer comprising recurring units which become alkali soluble under the action of acid onto a substrate to form a first resist coating, heat treating, exposing, heat treating, developing to form a first
8105748 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning pr January 31, 2012
A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2, R.sup.3 and R.sup.4 are C.sub.1-C.sub.10 alkyl, alkenyl or oxoalkyl or C.sub.6-C.sub.18 aryl, aralkyl or aryloxoalkyl, or two of R.sup.2, R.sup.
8101341 Patterning process January 24, 2012
A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation, PE
8101335 Resist composition and patterning process January 24, 2012
A copolymer of an alkali-soluble (.alpha.-trifluoromethyl)-acrylate and a norbornene derivative is useful as an additive to a resist composition. When processed by immersion lithography, the resist composition exhibits excellent water repellency and water slip and forms a pattern with fe
8062828 Positive resist composition and patterning process November 22, 2011
A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy ra
8057985 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning pr November 15, 2011
A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2, R.sup.3 and R.sup.4 are C.sub.1-C.sub.10 alkyl, alkenyl or oxoalkyl or C.sub.6-C.sub.18 aryl, aralkyl or aryloxoalkyl, or two of R.sup.2, R.sup.
8057982 Monomer, resist composition, and patterning process November 15, 2011
A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation,
8057981 Resist composition, resist protective coating composition, and patterning process November 15, 2011
A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersi
8048610 Sulfonium salt-containing polymer, resist composition, and patterning process November 1, 2011
A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R.sup.1 is H, F, CH.sub.3 or CF.sub.3, Rf is H, F, CF.sub.3 or C.sub.2F.sub.5, A is an optionally fluorine or oxygen-substituted
8043788 Resist composition and patterning process October 25, 2011
To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing amino and recurring units containing .alpha.-trifluoromethylhydroxy as an additive. The composition
8039198 Sulfonium salt-containing polymer, resist composition, and patterning process October 18, 2011
A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2 to R.sup.4 are C.sub.1-C.sub.10 alkyl or alkoxy, R.sup.5 is C.
8003295 Patterning process and resist composition used therein August 23, 2011
A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern, the first positive resist composition comprising a polymer having copolymerized recurring units having naphthol
7879530 Antireflective coating composition, antireflective coating, and patterning process February 1, 2011
A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at .alpha.- and .alpha.'-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming c
7871761 Resist lower layer material, resist lower layer substrate comprising the material and method for January 18, 2011
Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as
7771914 Resist composition and patterning process August 10, 2010
A resist composition comprises a polymer comprising recurring units having formula (1) wherein R.sup.1, R.sup.4, R.sup.7, and R.sup.14 are H or methyl, R.sup.2, R.sup.3, R.sup.15, and R.sup.16 are H, alkyl or fluoroalkyl, R is F or H, R.sup.5 is alkylene, R.sup.6 is fluorinated alkyl
7741015 Patterning process and resist composition June 22, 2010
A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist
7678530 Lactone-containing compound, polymer, resist composition, and patterning process March 16, 2010
Lactone-containing compounds having formula (1) are novel wherein A.sup.1 is a polymerizable functional group having a double bond, R.sup.1 is a monovalent C.sub.1-C.sub.10 hydrocarbon group in which some or all hydrogen atoms are substituted by fluorine atoms, and W is CH.sub.2, O or
7670750 Polymer, resist protective coating material, and patterning process March 2, 2010
A resist protective coating material comprises a polymer comprising repeat units having formulae (1a) and (1b) and having a Mw of 1,000-500,000. R.sup.1a and R.sup.1b are H, F or alkyl or fluoroalkyl, R.sup.2a, R.sup.2b, R.sup.3a and R.sup.3b are H or alkyl, or R.sup.2a and R.sup.2b,
7666967 Ester compound, polymer, resist composition, and patterning process February 23, 2010
A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R.sup.1 is F or C.sub.1-C.sub.6 fluoroalkyl, R.sup.2 is H or C.sub.1-C.sub.8 alkyl, R.sup.3 is O or C.sub.1-C.sub.6 alkylene, R.sup.4 and
7642034 Polymer, resist protective coating material, and patterning process January 5, 2010
A polymer comprising repeat units having formula (1) wherein R.sup.1 and R.sup.2 are hydrogen or C.sub.1-C.sub.12 alkyl, or R.sup.1 and R.sup.2 may bond together to form a ring, and R.sup.30 is hydrogen or methyl is used to formulate a resist protective coating material. A protective
7632624 Photoresist undercoat-forming material and patterning process December 15, 2009
A material comprising a specific bisphenol compound of formula (1) is useful in forming a photoresist undercoat wherein R.sup.1 and R.sup.2 are H, alkyl, aryl or alkenyl, R.sup.3 and R.sup.4 are H, alkyl, alkenyl, aryl, acetal, acyl or glycidyl, R.sup.5 and R.sup.6 are alkyl having a
7622242 Resist composition and patterning process November 24, 2009
A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R.sup.1 is F or CF.sub.3, R.sup.2 and R.sup.3 are H or alkyl or form a ring, R.sup.4 is H or an acid labile
7598016 Resist composition and patterning process October 6, 2009
To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing a carboxylic acid ammonium salt and recurring units containing at least one fluorine atom as an add
7592407 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning pr September 22, 2009
A polymerizable fluorinated compound having formula (2a) or (2b) wherein R.sup.1 and R.sup.2 are H or C.sub.1-C.sub.20 alkyl or fluoroalkyl, R.sup.3 is H, F or C.sub.1-C.sub.4 alkyl or fluoroalkyl, and R is H or a protective group is polymerized into a fluorinated polymer which is used
7569326 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process August 4, 2009
A sulfonium salt having a polymerizable anion generates a strong sulfonic acid upon exposure to high-energy radiation so that it facilitates effective scission of acid labile groups in chemically amplified resist compositions. It is useful as a monomer from which a base resin for use
7569323 Resist protective coating material and patterning process August 4, 2009
A resist protective coating material is provided comprising an .alpha.-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dis
7537880 Polymer, resist composition, and patterning process May 26, 2009
To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetratio
7514204 Resist composition and patterning process April 7, 2009
A resist composition comprises a polymer which increases its alkali solubility under the action of an acid as a base resin, and a copolymer comprising recurring units containing a sulfonic acid amine salt and recurring units containing at least one fluorine atom as an additive. The c
7514202 Thermal acid generator, resist undercoat material and patterning process April 7, 2009
A thermal acid generator of generating an acid on heating above 100.degree. C. has formula: CF.sub.3CH(OCOR)CF.sub.2SO.sub.3.sup.-(R.sup.1).sub.4N.sup.+ wherein R is alkyl or aryl, R.sup.1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R.sup.1 may bond toget
7510820 Resist undercoat-forming material and patterning process March 31, 2009
In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of n and k so that it
7491483 Polymers, positive resist compositions and patterning process February 17, 2009
A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy
7488567 Polymer, resist composition and patterning process February 10, 2009
A polymer comprising recurring units of formula (1) wherein R.sup.1 is F or fluoroalkyl, R.sup.2 is alkylene or fluoroalkylene, and R.sup.3 is an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving
7476486 Resist composition and patterning process January 13, 2009
A resist composition comprising a fullerene having five phenol derivatives is provided.
7468236 Amine compound, chemically amplified resist composition and patterning process December 23, 2008
Chemically amplified resist compositions comprising amine compounds having a fluorinated alkyl group offer an excellent resolution and a precise pattern profile and are useful in microfabrication by KrF, ArF, F.sub.2, EUV, EB or X-ray lithography. They are also effective in the immersion
7455952 Patterning process and resist overcoat material November 25, 2008
In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from a resist overcoat material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble
7449277 Positive resist compositions and patterning process November 11, 2008
A polymer is obtained from (meth)acrylate having a bridged ring lactone group, (meth)acrylate having an acid-labile leaving group, and (meth)acrylate having a hydroxynaphthyl pendant. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy ra
7416833 Photoresist undercoat-forming material and patterning process August 26, 2008
An undercoat-forming material comprising a copolymer derived from an indene and a compound having a hydroxyl or epoxy group and a double bond, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect, has
7378218 Polymer, resist composition and patterning process May 27, 2008
A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1,000-500,000 is provided. R.sup.1 is an acid labile group, R.sup.2 is a single bond or methylene, a1, a2, a3, and a4 are numbers from more than 0 to less than 1, and 0<a1+a2+a3+a4.ltoreq.1, b
7368218 Positive resist compositions and patterning process May 6, 2008
A polymer which is obtained from a combination of (meth)acrylate having a bridged ring lactone group and (meth)acrylate having an acid leaving group with a hexafluoroalcohol group is used as a base resin to formulate a positive resist composition which when exposed to high-energy radiati
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