| Patent Number |
Title Of Patent |
Date Issued |
| 7616410 |
Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing th |
November 10, 2009 |
| There are provided a magnetic detecting element capable of maintaining large .DELTA.RA and of reducing magnetostriction by improving a material forming a free magnetic layer, and a method of manufacturing the same. An NiFeX alloy layer is formed in a free magnetic layer. For example, the |
| 7609489 |
Magnetic sensor using NiFe alloy for pinned layer |
October 27, 2009 |
| A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allow |
| 7599155 |
Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path |
October 6, 2009 |
| A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic laye |
| 7567413 |
Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, |
July 28, 2009 |
| There is provided a magnetic detecting element by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX |
| 7564661 |
Magnetic sensing element including free layer having gradient composition and method for manufac |
July 21, 2009 |
| A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer |
| 7558029 |
Magnetic detectible head comprising free layer |
July 7, 2009 |
| There is provided a magnetic detecting element having a large .DELTA.RA. A free magnetic layer has a three layer structure in which a CoFe layer, an Ni.sub.aFe.sub.b alloy layer (where a and b are represented by at %, 0.ltoreq.a.ltoreq.25, and a+b=100), and a CoFe layer are laminated fro |
| 7554776 |
CCP magnetic detecting element including a self-pinned CoFe layer |
June 30, 2009 |
| A CPP magnetic sensing element is provided which may exhibit a large value of .DELTA.RA (the product of the resistance variation .DELTA.R and area A of the magnetic sensing element). The magnetic sensing element includes a free magnetic layer and a pinned magnetic layer. At least one of |
| 7502210 |
CPP magnetic detecting device containing NiFe alloy on free layer thereof |
March 10, 2009 |
| A magnetic detecting device having a large .DELTA.RA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a Ni.sub.aFe.sub.b alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47.ltoreq.a.ltoreq.77 and a+b=100), and |
| 7499249 |
Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer |
March 3, 2009 |
| A magnetic detecting element capable of maintaining a large .DELTA.RA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an |
| 7499248 |
Magnetic detective head comprising free layer |
March 3, 2009 |
| A free magnetic layer is a laminated body of a Co.sub.2MnZ alloy layer (Z is one or more elements selected from a group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a Co.sub.aFe.sub.100-a alloy layer. The Co.sub.aFe.sub.100-a alloy layer has a composition ratio 76.ltoreq |
| 7480122 |
Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic all |
January 20, 2009 |
| A magnetic detecting device and a method of manufacturing the magnetic detecting device are provided. Non-magnetic material layer-side magnetic layers of second fixed magnetic layers form a fixed magnetic layer. Each of the non-magnetic material layer-side magnetic layers and a free |
| 7466525 |
Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free |
December 16, 2008 |
| A magnetic sensing element exhibiting a large .DELTA.RA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant .lamda.s. The free magnetic layer includes a Co.sub.2MnZ alloy layer (where Z may represent at least one element sel |
| 7463457 |
CPP giant magnetoresistive element with particular bulk scattering coefficient |
December 9, 2008 |
| A CPP giant magnetoresistive element includes a multilayer film including a lower pinned magnetic layer having a laminated ferrimagnetic structure including a lower first pinned magnetic sublayer, a lower nonmagnetic intermediate sublayer, and a lower second pinned magnetic sublayer; a |
| 7463026 |
Magnetic sensor including bridge circuit having fixed resistance like structure of element |
December 9, 2008 |
| A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements d |
| 7443635 |
Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and ha |
October 28, 2008 |
| A multilayer film is placed on a subatrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The multilayer film has recessed sections arranged in both side regions thereof, the recessed sectio |
| 7433161 |
Spin-valve element having fixed layer containing nano-oxide layer |
October 7, 2008 |
| A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In |
| 7428128 |
High read output, high sensitivity magnetic sensing element |
September 23, 2008 |
| A magnetic sensing element has pinned magnetic layers disposed on the two sides of a free magnetic layer in the track width direction with nonmagnetic conductive layers therebetween, and an electric current flows through these layers in parallel to the surfaces. The back end of the f |
| 7369372 |
Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron all |
May 6, 2008 |
| An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface between the ferromagne |
| 7365948 |
Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element inc |
April 29, 2008 |
| An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to |
| 7362546 |
Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including m |
April 22, 2008 |
| A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X--Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and atoms forming the no |
| 7336453 |
Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal plan |
February 26, 2008 |
| A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equ |
| 7312960 |
Magnetic sensing element comprising a pinned magnetic layer, a free magnetic layer, and a nonmag |
December 25, 2007 |
| A magnetic sensing element is provided in which the magnetization of a pinned magnetic layer is pinned by a uniaxial anisotropy of the pinned magnetic layer itself. A nonmagnetic layer for increasing the coercive force of the pinned magnetic layer is disposed adjacent to the pinned m |
| 7312959 |
Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufactu |
December 25, 2007 |
| At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are formed. At lower sides of the extension portions, a pair of first antiferromagnetic layers |
| 7310207 |
Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlay |
December 18, 2007 |
| A magnetic sensing element using a Heusler alloy is provided. In the magnetic sensing element, a free magnetic layer composed of a Heusler alloy layer is disposed on a nonmagnetic layer that corresponds to an fcc layer having the face-centered cubic (fcc) structure. Equivalent crystal |
| 7295409 |
CPP giant magnetoresistive element with particular bulk scattering coefficient |
November 13, 2007 |
| A CPP giant magnetoresistive element includes a multilayer film including a lower pinned magnetic layer having a laminated ferrimagnetic structure including a lower first pinned magnetic sublayer, a lower nonmagnetic intermediate sublayer, and a lower second pinned magnetic sublayer; a |
| 7283335 |
Magnetic detecting element |
October 16, 2007 |
| In a magnetic detecting element, ferromagnetic layers are formed on both side portions of a free magnetic layer through nonmagnetic intermediate layers, and second antiferromagnetic layers are formed on the ferromagnetic layers with a spacing greater than the spacing between the ferr |
| 7268984 |
Magnetic detecting element having a self-pinned layer |
September 11, 2007 |
| A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer having |
| 7268983 |
Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancin |
September 11, 2007 |
| A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers separated from eac |
| 7268978 |
Self-pinned magnetic detecting element |
September 11, 2007 |
| A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer is |
| 7265540 |
Angle sensor having low waveform distortion |
September 4, 2007 |
| A magnetoresistive element includes a meandering X-axis array that is constituted by X-axis segments alternately connected, and a meandering Y-axis array that is constituted by Y-axis segments alternately connected. When rotated 90.degree., the Y-axis array has the same layout as the |
| 7241515 |
Electrode layer for thin-film magnetic heads |
July 10, 2007 |
| An electrode layer for thin-film magnetic heads includes a Ta base sub-layer, an Au sub-layer functioning as a main conductive sub-layer, and a protective sub-layer, those sub-layers being disposed in that order. An Au electrode seed sub-layer containing any one of NiFeCr, NiCr, and |
| 7229706 |
Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic |
June 12, 2007 |
| The present invention provides a magnetic detecting element capable of increasing a difference between the ease of a conduction electron flow in a low-resistance state and the ease of a conduction electron flow in a high-resistance state to increase a resistance change .DELTA.R. In the |
| 7220499 |
CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element |
May 22, 2007 |
| A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed |
| 7218487 |
Exchange coupling film and magnetoresistive element using the same |
May 15, 2007 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
| 7218485 |
GMR element having fixed magnetic layer provided on side surface of free magnetic layer |
May 15, 2007 |
| A free magnetic layer contains free magnetic material layers and an intermediate layer interposed therebetween. A fixed magnetic layer contains fixed magnetic material layers and a non-magnetic intermediate layer interposed therebetween. The free magnetic material layer and the fixed |
| 7212383 |
Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer sectio |
May 1, 2007 |
| Disclosed are a magnetic sensing element in which side reading can be prevented, read sensitivity can be improved, and gap narrowing is enabled, and a method for fabricating the same. A magnetic sensing element includes a pair of first antiferromagnetic layers separated by a first sp |
| 7196879 |
Exchange coupling film and magnetoresistive element using the same |
March 27, 2007 |
| A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invent |
| 7193411 |
Angle sensor having low waveform distortion |
March 20, 2007 |
| A magnetoresistive element includes a meandering X-axis array that is constituted by X-axis segments alternately connected, and a meandering Y-axis array that is constituted by Y-axis segments alternately connected. When rotated 90.degree., the Y-axis array has the same layout as the |
| 7178222 |
Method of manufacturing a tunneling magnetoresistive element |
February 20, 2007 |
| Insulating layers are formed on both sides of a multilayer film, and bias layers are formed in contact with at least portions of both end surfaces of a free magnetic layer. The bias layers are formed so as not to extend to the upper surface of the multilayer film. In this construction, a |
| 7164560 |
Spin-valve magnetoresistive thin film element |
January 16, 2007 |
| A spin-valve magnetoresistive thin film element comprises an antiferromagnetic layer and a pinned magnetic film. The pinned magnetic film contacts the antiferromagnetic layer, wherein a magnetizing direction is pinned by an exchange coupling magnetic field between the pinned magnetic |
| 7158354 |
Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have |
January 2, 2007 |
| A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose .beta. values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lo |
| 7150092 |
Method for manufacturing spin valve |
December 19, 2006 |
| A method of manufacturing a spin-valve thin-film magnetic element is provided. The spin-valve thin-film magnetic element includes a free magnetic layer and laminates of pinned magnetic layers and antiferromagnetic layers formed on two surfaces of the free magnetic layer. |
| 7142399 |
Exchange coupling film and magnetoresistive element using the same |
November 28, 2006 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
| 7132175 |
GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer |
November 7, 2006 |
| The present invention provides a CPP-type spin-valve magnetic detecting element permitting a decrease in an effective element area even with a large optical element area. A current limiting layer having an insulating portion and a conductive portion is formed in a free magnetic layer to |
| 7126797 |
Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated |
October 24, 2006 |
| A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the |
| 7123453 |
Exchange coupling film and magnetoresistive element using the same |
October 17, 2006 |
| A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invent |
| 7119998 |
Exchange coupling film and magnetoresistive element using the same |
October 10, 2006 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
| 7119996 |
Exchange coupling film and magnetoresistive element using the same |
October 10, 2006 |
| A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invent |
| 7106560 |
Magnetic sensor with second antiferromagnetic layer having smaller depth in height direction tha |
September 12, 2006 |
| An end portion of a backfill gap layer is provided on two side portions of a free magnetic layer in a back region, and second antiferromagnetic layers are formed on the two side portions of the free magnetic layer from a face opposing a recording medium to the end portion of the back |
| 7106559 |
Exchange coupling film and magnetoresistive element using the same |
September 12, 2006 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
