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Inventor:
Harvey; Kenneth C.
Address:
Dallas, TX
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
8125633 Calibration of a radiometric optical monitoring system used for fault detection and process moni February 28, 2012
The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral
7630859 Method and apparatus for reducing the effects of window clouding on a viewport window in a react December 8, 2009
The present invention is directed to a method and apparatus for reducing the effects of window clouding on a viewport window in a reactive environment. One or more clouded viewport windows are obtained for testing, in which the clouding results from exposure to the reactive environme
7339682 Heterodyne reflectometer for film thickness monitoring and method for implementing March 4, 2008
The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly
6830939 System and method for determining endpoint in etch processes using partial least squares discrim December 14, 2004
The present invention is directed to a system, method and software product for creating a predictive model of the endpoint of etch processes using Partial Least Squares Discriminant Analysis (PLS-DA). Calibration data is collected from a calibration wafer using optical emission spectrosc
6326274 Method for improving performance and reliability of MOS technologies and data retention characte December 4, 2001
A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferabl
6221705 Method for improving performance and reliability of MOS technologies and data retention characte April 24, 2001
A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferabl
6071751 Deuterium sintering with rapid quenching June 6, 2000
Channel-hot-carrier reliability can be improved by deuterium sintering. However, the benefits obtained by deuterium sintering can be greatly reduced or destroyed by thermal processing steps which break Si--H and Si--D bonds. A solution is to increase the deuterium concentration near
6017806 Method to enhance deuterium anneal/implant to reduce channel-hot carrier degradation January 25, 2000
A method of fabricating a semiconductor device wherein there is provided a partially fabricated semiconductor device having a Si/SiO.sub.2 interface in which all processing steps involving heating of the device to a temperature above the Si-hydrogen dissociation temperature for a suf










 
 
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