| Patent Number |
Title Of Patent |
Date Issued |
| 8125633 |
Calibration of a radiometric optical monitoring system used for fault detection and process moni |
February 28, 2012 |
| The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral |
| 7630859 |
Method and apparatus for reducing the effects of window clouding on a viewport window in a react |
December 8, 2009 |
| The present invention is directed to a method and apparatus for reducing the effects of window clouding on a viewport window in a reactive environment. One or more clouded viewport windows are obtained for testing, in which the clouding results from exposure to the reactive environme |
| 7339682 |
Heterodyne reflectometer for film thickness monitoring and method for implementing |
March 4, 2008 |
| The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly |
| 6830939 |
System and method for determining endpoint in etch processes using partial least squares discrim |
December 14, 2004 |
| The present invention is directed to a system, method and software product for creating a predictive model of the endpoint of etch processes using Partial Least Squares Discriminant Analysis (PLS-DA). Calibration data is collected from a calibration wafer using optical emission spectrosc |
| 6326274 |
Method for improving performance and reliability of MOS technologies and data retention characte |
December 4, 2001 |
| A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferabl |
| 6221705 |
Method for improving performance and reliability of MOS technologies and data retention characte |
April 24, 2001 |
| A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferabl |
| 6071751 |
Deuterium sintering with rapid quenching |
June 6, 2000 |
| Channel-hot-carrier reliability can be improved by deuterium sintering. However, the benefits obtained by deuterium sintering can be greatly reduced or destroyed by thermal processing steps which break Si--H and Si--D bonds. A solution is to increase the deuterium concentration near |
| 6017806 |
Method to enhance deuterium anneal/implant to reduce channel-hot carrier degradation |
January 25, 2000 |
| A method of fabricating a semiconductor device wherein there is provided a partially fabricated semiconductor device having a Si/SiO.sub.2 interface in which all processing steps involving heating of the device to a temperature above the Si-hydrogen dissociation temperature for a suf |
