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Harris, Jr.; James S.
Thousand Oaks, CA
No. of patents:

Patent Number Title Of Patent Date Issued
4285000 Buried channel charge coupled device with semi-insulating substrate August 18, 1981
A charge coupled device has a semi-insulating semiconductor for a substrate. Resistivity of the semiconductor is at least 10.sup.6 ohm cm. A semi-conductive layer is grown epitaxially or is implanted on the substrate to form a thin, active, charge transport layer. A row of parallel,
4227943 Schottky barrier solar cell October 14, 1980
A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr.sub.0.4).sub.x. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semi
4110661 Light emitting device for optical communications August 29, 1978
A high-speed, light emitting device which utilizes a solid state source for generating light for use in fiber optical communications. The source is an active, narrow band gap layer of semiconductive material between heterojunctions formed with a p.sup.+ -type material on one side of an

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