| Patent Number |
Title Of Patent |
Date Issued |
| 6753253 |
Method of making wiring and logic corrections on a semiconductor device by use of focused ion be |
June 22, 2004 |
| Herein disclosed are a variety of techniques relating to the wiring and logic corrections on a chip by making use of the focused ion beam (which is shortly referred to as "FIB") or the laser selection metal CVD. The time periods for the wiring corrections and for debugging and developing |
| 5824598 |
IC wiring connecting method using focused energy beams |
October 20, 1998 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5683547 |
Processing method and apparatus using focused energy beam |
November 4, 1997 |
| A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching |
| 5497034 |
IC wiring connecting method and apparatus |
March 5, 1996 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5472507 |
IC wiring connecting method and apparatus |
December 5, 1995 |
| An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a |
| 5358806 |
Phase shift mask, method of correcting the same and apparatus for carrying out the method |
October 25, 1994 |
| A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrat |
| 5229607 |
Combination apparatus having a scanning electron microscope therein |
July 20, 1993 |
| A combination apparatus having a scanning electron microscope includes equipment for performing any of observing, measuring and processing operations on a sample placed in a sample chamber. The sample chamber contains a focused electron beam irradiating unit apart from the components |
| 5223109 |
Ion beam processing method and apparatus |
June 29, 1993 |
| There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this method is also disclosed. In the formation of a product having a non-circular cross-section, whe |
| 5086015 |
Method of etching a semiconductor device by an ion beam |
February 4, 1992 |
| A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning |
| 5055696 |
Multilayered device micro etching method and system |
October 8, 1991 |
| In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer |
| 5026664 |
Method of providing a semiconductor IC device with an additional conduction path |
June 25, 1991 |
| A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for |
| 4933565 |
Method and apparatus for correcting defects of X-ray mask |
June 12, 1990 |
| The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a c |
| 4925755 |
Method of correcting defect in circuit pattern |
May 15, 1990 |
| A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on a conductive film is coated with a protective film, then forming a hole or a slit by irradiating a high-intensity focused ion beam to a dr |
| 4900695 |
Semiconductor integrated circuit device and process for producing the same |
February 13, 1990 |
| The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a p |
| 4868068 |
IC wiring connecting method and resulting article |
September 19, 1989 |
| A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a l |
| 4683378 |
Apparatus for ion beam work |
July 28, 1987 |
| This invention discloses an ion beam work apparatus which comprises ion mean radiation means for focusing and radiating an ion beam extracted from an ion source to a target put on a moving mechanism, and scanning two-dimensionally the radiation position; secondary particle detection |
