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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Harada; Yoshinao
Address:
Hyogo, JP
No. of patents:
1
Patents:




Patent Number Title Of Patent Date Issued
7554156 Semiconductor device having a field effect transistor using a high dielectric constant gate insu June 30, 2009
In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the hi


 
 
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