| Patent Number |
Title Of Patent |
Date Issued |
| 7554069 |
Solid state imaging device and imaging apparatus having a first well region forming an overflow |
June 30, 2009 |
| A solid state imaging device having an image area in which a plurality of light receiving pixels is arranged on a semiconductor substrate of a first conductive type is disclosed. The device includes: a plurality of photosensor parts formed by providing on the semiconductor substrate a |
| 7535038 |
Solid-state imaging device and its manufacturing method |
May 19, 2009 |
| A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a cha |
| 7362364 |
Solid-state image pickup device with photoelectric charge transferrer to a floating diffusion re |
April 22, 2008 |
| A solid-state image pickup device including a charge transferrer to transfer a signal charge obtained through photoelectric conversion; a floating diffusion region; a reset means for resetting the potential of the floating diffusion region; and a current source for supplying, to the |
| 7289150 |
Solid-state image apparatus including a plurality of horizontal transfer registers for transferr |
October 30, 2007 |
| In a CCD image apparatus in which an image section is horizontally divided into two areas, two horizontal CCDs are related to the two image areas with one-to-one correspondence and transfer the signal electric charges of the two image areas, and the two horizontal CCDs are driven in an |
| 7034876 |
Solid-state image pickup device and method for driving the same |
April 25, 2006 |
| In a solid-state image pickup device, third transfer electrodes are disposed in parallel to vertical transfer registers, and second transfer electrodes are disposed vertically to the vertical transfer registers. These transfer electrodes are also formed on the read-out gate portions |
| 6927091 |
Method for fabricating solid-state imaging device |
August 9, 2005 |
| Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop regions of a seco |
| 6358814 |
Method for manufacturing semiconductor devices having an epitaxial layer and wafer alignment mar |
March 19, 2002 |
| To control the positional relation between semiconductor regions formed on an epitaxial layer after the epitaxial layer is formed with high accuracy in a method for manufacturing semiconductor devices in which a plurality of semiconductor regions are formed selectively on the epitaxial l |
| 6339213 |
Solid state imaging device and method for driving the same |
January 15, 2002 |
| A CCD solid state imaging device (21), which is comprised of an imaging section (24) formed of a plurality of light receiving portions (22), each serving as a pixel, and of a vertical transfer register (23) corresponding to each column of light receiving portions, first and second storag |
| 6211915 |
Solid-state imaging device operable in wide dynamic range |
April 3, 2001 |
| In a CCD solid-state imaging device, a wider dynamic range is available without producing fixed pattern noise. A solid-state imaging device is comprised of: an imaging portion for photoelectrically converting incident light to thereby produce a signal charge of a high sensitivity and a |
| 6141049 |
Image generating device having adjustable sensitivity |
October 31, 2000 |
| A solid-state imaging apparatus in which the dynamic range can be increased and its magnification factor can be made variable without lowering the sensitivity. A plurality of photosensors are formed on the obverse surface of a semiconductor substrate. A vertical register and a read-out c |
| 5929470 |
Solid state imager with reduced smear |
July 27, 1999 |
| A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosenso |
| 5898195 |
Solid-state imaging device of a vertical overflow drain system |
April 27, 1999 |
| A solid-state imaging device of a vertical overflow drain system according to the present invention includes a first conductive type semiconductor substrate, a second conductive type semiconductor well region formed on the first conductive type semiconductor substrate, and a first conduc |
| 5763292 |
Method of making a solid state imager with reduced smear |
June 9, 1998 |
| A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosenso |
| 5670813 |
Protection circuit for electronic components employing bipolar transistors |
September 23, 1997 |
| In a semiconductor device such as a CCD solid-state imager having terminals connected with protection transistors, a strength against a static electricity applied between a terminal and a ground (GND) and a strength against a static electricity applied between a terminal and a substrate |
| 5614741 |
Solid state imager with reduced smear and method of making the same |
March 25, 1997 |
| A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosenso |
| 5283450 |
FIT-CCD image sensing device |
February 1, 1994 |
| A solid state image sensing device comprising first and second horizontal shift registers of two-phase drive system, a smear drain region disposed in an opposing relation to a first storage section of the second horizontal shift register to which the first phase drive pulse of the se |
