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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Han; Jai Yong
Address:
Suwon-si, KR
No. of patents:
9
Patents:












Patent Number Title Of Patent Date Issued
8138416 Solar cell and method for manufacturing the same March 20, 2012
Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of In.sub.xGa.sub.
8120835 Electro-phoresis device February 21, 2012
Provided is an electro-phoresis device that includes a light control layer, a first electrode, a second electrode and a third electrode. The light control layer may include a plurality of electro-phoresis particles. The first electrode and the second electrode may form an electric fi
8053854 Micro-heater arrays and pn-junction devices having micro-heater arrays, and methods for fabricat November 8, 2011
Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and
8043942 Method for producing core-shell nanowires, nanowires produced by the method and nanowire device October 25, 2011
Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a
7907327 Electrophoretic display device and operating method of the same March 15, 2011
An electrophoretic display device with high reliability, high reflectance and improved color characteristics. The electrophorectic display device includes unit cells, each of which includes transmissive particles and a reflective panel. The unit cells are vertically laminated or arranged
7563660 Silicon film, crystalline film and method for manufacturing the same July 21, 2009
A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon film and/or crystalline film may include forming a insulating substrate, forming a buffer
7462893 Method of fabricating GaN December 9, 2008
A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH.sub.3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The
7449066 Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crysta November 11, 2008
An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and
7314515 Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crysta January 1, 2008
An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and










 
 
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