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Inventor: Han; Jae Woong
Address: Seoul, KR
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7923716 |
Nitride semiconductor device |
April 12, 2011 |
| There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers an |
| 7915607 |
Nitride semiconductor device |
March 29, 2011 |
| A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well |
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