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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Halpin; Michael W.
Address:
Phoenix, AZ
No. of patents:
20
Patents:




Patent Number Title Of Patent Date Issued
7186298 Wafer support system March 6, 2007
A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A s
7166165 Barrier coating for vitreous materials January 23, 2007
A chemical vapor deposition apparatus comprises a reaction chamber and one or more vitreous components having an outer surface that is covered at least in part by a devitrification barrier layer. In some arrangements, the one or more vitrious components can include a thermocouple. In a
6869485 Compact process chamber for improved process uniformity March 22, 2005
A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a c
6692576 Wafer support system February 17, 2004
A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep
6608287 Process chamber with rectangular temperature compensation ring August 19, 2003
The chamber has a lenticular cross-section with a horizontal support plate extending between sides of the chamber. A rectangular aperture is formed in the support plate for positioning a rotatable susceptor. A temperature compensation ring surrounds the susceptor and is supported by fing
6572924 Exhaust system for vapor deposition reactor and method of using the same June 3, 2003
An improved exhaust conductance system for a CVD reactor includes two exhaust paths and a three-way valve controlling flow to the exhaust paths. The valve directs flow through a first exhaust conductance path when reactant gas passes through the reactor, and through a second exhaust
6491757 Wafer support system December 10, 2002
An apparatus for processing a substrate comprises a susceptor for supporting the substrate, an upper heat source spaced above the susceptor, a lower heat source spaced below the susceptor, and a controller. The controller provides power to the heat sources at a selected ratio between
6464792 Process chamber with downstream getter plate October 15, 2002
An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower w
6454866 Wafer support system September 24, 2002
A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep
6454863 Compact process chamber for improved process uniformity September 24, 2002
A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a c
6360148 Method and apparatus for controlling hydraulic dampers March 19, 2002
Among other things, methods and apparatus for automatically controlling hydraulic dampers are described. The apparatus can automatically sense the magnitude of at least one electrical input signal, automatically process each input signal through a microprocessor and associated software
6343183 Wafer support system January 29, 2002
A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep
6319556 Reflective surface for CVD reactor walls November 20, 2001
A reflector plate is provided for scattering radiant heat energy in a semiconductor processing reactor chamber to achieve uniform temperature across a substrate to be processed. The surface is characterized by a plurality of adjoining depressions with substantially no planar sections
6293749 Substrate transfer system for semiconductor processing equipment September 25, 2001
A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either
6203622 Wafer support system March 20, 2001
A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep
6143079 Compact process chamber for improved process uniformity November 7, 2000
A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a c
6113702 Wafer support system September 5, 2000
A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep
6093252 Process chamber with inner support July 25, 2000
An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower w
6053982 Wafer support system April 25, 2000
A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep
6021152 Reflective surface for CVD reactor walls February 1, 2000
A reflector plate is provided for scattering radiant heat energy in a semiconductor processing reactor chamber to achieve uniform temperature across a substrate to be processed. The surface is characterized by a plurality of adjoining depressions with substantially no planar sections


 
 
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