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Gueret; Pierre L.
Richterswil, CH
No. of patents:

Patent Number Title Of Patent Date Issued
4675711 Low temperature tunneling transistor June 23, 1987
The transistor comprises two electrodes, (source (22) and drain (23), with a semiconductor tunnel channel (21A, 21B) arranged therebetween. A gate (24) for applying control signals is coupled to the channel. The semiconductor channel consists of a plurality of regions differing in th
4647954 Low temperature tunneling transistor March 3, 1987
The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (s
4643627 Vacuum transfer device February 17, 1987
A vacuum transfer device includes a central processing chamber and a plurality of additional chambers radially positioned around the central chamber and in vacuum-tight connection therewith. A rotatable coulisse arrangement in the central chamber is extendable so as to reach into the
3953749 Binary circuitry including switching elements utilizing superconductive tunneling effects April 27, 1976
Two Josephson gates are connected in series to a low impedance voltage source. Each junction is bridged by a load impedance. The feed voltage is maintained in the order of the gap voltage which corresponds to the voltage drop across a Josephson junction when it is in its single-parti

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