| Patent Number |
Title Of Patent |
Date Issued |
| 7460578 |
On-chip lenses for diverting vertical cavity surface emitting laser beams |
December 2, 2008 |
| An optical device includes a chip containing a Vertical Cavity Surface Emitting Laser (VCSEL) active region that produces a laser beam on a first axis. The VCSEL can further include a post having a central axis offset a distance from the first axis. A lens can be mounted on the post |
| 7418021 |
Optical apertures for reducing spontaneous emissions in photodiodes |
August 26, 2008 |
| An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active r |
| 7403553 |
Absorbing layers for reduced spontaneous emission effects in an integrated photodiode |
July 22, 2008 |
| An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active r |
| 7403275 |
Optical reflectometry using integrated VCSEL photodiode chip |
July 22, 2008 |
| Optical time domain and frequency domain reflectometry using a VCSEL-photodiode combination. Optical time domain reflectometry can be accomplished using an integrated VCSEL-Photodiode. A pulse is emitted by the VCSEL and a reflection caused by an occurrence of interest along an optic |
| 7366217 |
Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes |
April 29, 2008 |
| An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active r |
| 7359419 |
Vertical cavity surface emitting laser optimized for thermal sensitivity |
April 15, 2008 |
| A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is formed on the active |
| 7346087 |
Method for performing eye safety measurements on laser emitter devices |
March 18, 2008 |
| A method of performing eye safety measurements on laser devices is disclosed. The laser is contained within a housing having a central bore. The method uses an optical detector having at least two zones to make separate measurements of both a direct power coming from the laser and an |
| 7298942 |
Pluggable optical optic system having a lens fiber stop |
November 20, 2007 |
| An optical coupler having two refractive lenses for coupling an optoelectronic element and an optical medium to each other. One lens may be in contact with the optical medium. The refractive index of the one lens may be similar to the index of the optical medium. The optoelectronic e |
| 7294868 |
Super lattice tunnel junctions |
November 13, 2007 |
| Super lattice structures in conjunction with a tunnel junction to provide an improved contact for multiple components. The tunnel junctions can include a first semiconductor material having a resistance parameter for conducting a current and a second semiconductor material having a r |
| 7281861 |
Methods and apparatus for optical component identification |
October 16, 2007 |
| Methods, apparatuses, and systems for obtaining identification information about fiber optic components and optical assemblies in a non-invasive manner. The present invention includes optical subassemblies ("OSAs"), and optical assemblies incorporating the OSAs where the OSAs comprise |
| 7275878 |
Attenuated barrel selection algorithms |
October 2, 2007 |
| The present invention relates to controlling parameters of an optical output of an optical transmitter. An optical package can be selected based on a level of attenuation of a parameter of a transmitter output by the optical package. The laser and the optical package can be assembled |
| 7274882 |
Method and apparatus for monitoring the power level of two or more optical transmitters |
September 25, 2007 |
| Methods and apparatus for monitoring the power level of one or more optical emitters are provided. In some embodiments, optical signals from two or more optical emitters are directed at different regions of a photo detector. The photo detector may include two or more spaced contacts that |
| 7270490 |
Laser package with digital electronic interface |
September 18, 2007 |
| Optical transmission components, systems, and packages where the package includes a common housing containing a laser for transmission of an optical signal, a photodetector optically coupled to the laser for monitoring the laser transmission, and a laser driver electrically coupled t |
| 7255746 |
Nitrogen sources for molecular beam epitaxy |
August 14, 2007 |
| MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that h |
| 7251264 |
Distributed bragg reflector for optoelectronic device |
July 31, 2007 |
| This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also |
| 7190184 |
Systems for wafer level burn-in of electronic devices |
March 13, 2007 |
| In one example, a wafer level burn-in system includes a first electrode plate for providing electrical contact simultaneously to contacts of a group of semiconductor devices borne by a semiconductor wafer on a device surface of the semiconductor wafer. A second electrode plate is employe |
| 7184455 |
Mirrors for reducing the effects of spontaneous emissions in photodiodes |
February 27, 2007 |
| An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active r |
| 7095771 |
Implant damaged oxide insulating region in vertical cavity surface emitting laser |
August 22, 2006 |
| Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another spacer separates th |
| 7088518 |
Bidirectional optical device |
August 8, 2006 |
| A multiband wavelength multiplexed optical device for bidirectional communication over one light path. The device may use dichroic filters or reflectors, or other mechanisms for wavelength or bandwidth separation or discrimination of sent or received light signals. It may have a multitud |
| 7085300 |
Integral vertical cavity surface emitting laser and power monitor |
August 1, 2006 |
| An integral vertical cavity surface emitting laser (VCSEL) and power monitor assembly. The assembly is beneficially fabricated by anisotropically etching a silicon substrate having substantially flat top and bottom surfaces to form a cavity defined by an inwardly sloping wall that ex |
| 7061945 |
VCSEL mode-transforming phase filter with enhanced performance |
June 13, 2006 |
| A vertical cavity surface emitting laser (VCSEL) in which a higher order lasing mode produces a Gaussian-like single mode far field beam intensity pattern. Such a VCSEL includes a protective surface deposition on a VCSEL structure, and phase filter elements on the surface deposition. The |
| 7009224 |
Metamorphic long wavelength high-speed photodiode |
March 7, 2006 |
| A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice |
| 6990135 |
Distributed bragg reflector for optoelectronic device |
January 24, 2006 |
| An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may b |
| 6965626 |
Single mode VCSEL |
November 15, 2005 |
| A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located abov |
| 6963598 |
System and method for VCSEL polarization control |
November 8, 2005 |
| A system and method for VCSEL (vertical cavity surface emitting laser) polarization control is disclosed, including methods and apparatus comprising a component package (302, 304) having self-aligning features (316, 318), for indicating an alignment axis (320, 322), and an upper surf |
| 6949473 |
Methods for identifying and removing an oxide-induced dead zone in a semiconductor device struct |
September 27, 2005 |
| A method and system for identifying and/or removing an oxide-induced dead zone in a VCSEL structure is disclosed herein. In general, a VCSEL structure can be formed having at least one oxide layer and an oxide-induced dead zone thereof. A thermal annealing operation can then be perfo |
| 6875993 |
Systems and methods for optically detecting and identifying objects in an environment |
April 5, 2005 |
| Laser optical sensing systems and methods for detecting object characteristics are disclosed. The system includes a laser source with at least two emission apertures from which laser signals are emitted. The system also includes at least one detector, which is operationally responsiv |
| 6853007 |
Submount for vertical cavity surface emitting lasers and detectors |
February 8, 2005 |
| A semiconductor assembly having a submount with a plurality of conductive traces. A semiconductor array, such as a VCSEL array or a detector array, is attached to the submount. A plurality of conductive vias pass through the submount's body, or a conductive trace is disposed between a lo |
| 6816526 |
Gain guide implant in oxide vertical cavity surface emitting laser |
November 9, 2004 |
| A vertical cavity surface emitting laser with a current guide comprised of an ion implant region and an oxide structure. The oxide structure is beneficially formed first, then, a gain guide ion implant region is formed in or below the oxide structure. The ion implant region extends into |
| 6787756 |
Semiconductor laser-based area scanner |
September 7, 2004 |
| Multiple laser optical sensing systems and methods for detecting target characteristics are disclosed. The present invention detects the presence of an object in a monitored area using an laser-based object detection system and may selectively cause a controlled response when an object i |
| 6774348 |
Method and apparatus for monitoring the power of a multi-wavelength optical signal |
August 10, 2004 |
| Methods and apparatus for monitoring the power level of a multi-wavelength optical signal are provided. Also provided are methods and apparatus for adjusting the power level of selected optical emitters to compensate for the changes in power levels. |
| 6734981 |
Multiple laser optical systems and methods |
May 11, 2004 |
| A multiple laser optical sensing system and method for detecting target characteristics are disclosed. The system includes a laser source with at least two emission apertures from which laser signals are emitted. The system also includes at least one detector, which is operationally |
| 6693311 |
Wavelength selective detector |
February 17, 2004 |
| A wavelength selective detector having a first absorbing layer for absorbing light with a wavelength below a lower band cutoff, a second absorbing layer downstream of the first absorbing layer for absorbing light with a wavelength below an upper band cutoff, and a confinement layer s |
| 6674941 |
Optical coupling for optical fibers |
January 6, 2004 |
| A method and system for coupling a laser (e.g., vertical cavity surface emitting laser (VCSEL)) to an optical fiber is disclosed. A plurality of optical modes associated with a laser, e.g., a VCSEL, are scrambled, and radiation from the VCSEL can be focused on a fiber facet associated wi |
| 6558973 |
Metamorphic long wavelength high-speed photodiode |
May 6, 2003 |
| A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a lo |
| 6086263 |
Active device receptacle |
July 11, 2000 |
| A receptacle for terminating an optical fiber at an active device such as a photodetector or solid-state light source. The receptacle includes a housing, a termination fixture and an active device. The housing has an opening for receiving the terminal portion of an optical fiber, a door |
| 6069905 |
Vertical cavity surface emitting laser having intensity control |
May 30, 2000 |
| A vertical cavity surface emitting laser having intensity control for maintaining a constant proportional output under varying conditions of the laser. A tilted window is situated over the laser output to reflect a portion of the light to a photo detector area. Signals representing light |
| 5903588 |
Laser with a selectively changed current confining layer |
May 11, 1999 |
| A laser structure is provided with two current confining layers of a material that is subject to oxidation in the presence of an oxidizing agent. The laser structure is shaped to expose edges of the current confining layers to permit the edges to be exposed to the oxidizing agent. Th |
| 5625182 |
Light sensor with position compensation accomplished by area distribution |
April 29, 1997 |
| A light sensor comprises two light sensitive areas that are shaped to physically compensate for the decrease in light intensity resulting from movement of a movable object in which an aperture is formed. Movement of the aperture causes the light passing through the aperture to have a |
| 5264715 |
Emitting with structures located at positions which prevent certain disadvantageous modes and en |
November 23, 1993 |
| A light emitting device is provided with mirrors placed on opposite sides of the source of light and spaced apart by a distance that is determined as a function of the wavelength of the light emitted by the light source. One particular embodiment of the present invention spaces the mirro |
