| Patent Number |
Title Of Patent |
Date Issued |
| 7456064 |
High K dielectric material and method of making a high K dielectric material |
November 25, 2008 |
| A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed |
| 6723581 |
Semiconductor device having a high-K gate dielectric and method of manufacture thereof |
April 20, 2004 |
| The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiO.sub.x H.sub.y layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic ox |
| 6680130 |
High K dielectric material and method of making a high K dielectric material |
January 20, 2004 |
| A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed |
| 5904523 |
Process for device fabrication in which a layer of oxynitride is formed at low temperatures |
May 18, 1999 |
| A process for forming a silicon oxynitride layer in an N.sub.2 atmosphere is disclosed. The silicon oxynitride layer is formed by heating a silicon substrate in an N.sub.2 atmosphere for a period of time that is sufficient to form a nitrided layer with a nitrogen content of at least abou |
| 5863843 |
Wafer holder for thermal processing apparatus |
January 26, 1999 |
| A wafer holder for maintaining a semiconductor wafer at a constant temperature during film deposition is disclosed. The wafer holder is configured to have one or more quartz arms. Affixed to each arm is at least one quartz support, whose top end is adapted for holding the semiconduct |
| 5814562 |
Process for semiconductor device fabrication |
September 29, 1998 |
| The present invention is directed to a process for fabricating a semiconductor integrated circuit device, and specifically, a process for cleaning a silicon substrate before gate silicon dioxide is formed on the silicon substrate. The gate silicon dioxide is used to form transistor g |
