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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Graettinger; Thomas M.
Address:
Boise, ID
No. of patents:
63
Patents:


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Patent Number Title Of Patent Date Issued
8228743 Memory cells containing charge-trapping zones July 24, 2012
Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material
8154064 Semiconductor constructions April 10, 2012
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
8076248 Methods for forming semiconductor constructions, and methods for selectively etching silicon nit December 13, 2011
The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semicond
7989289 Floating gate structures August 2, 2011
Floating gate structures are generally described. In one example, an electronic device includes a semiconductor substrate, a tunnel dielectric coupled with the semiconductor substrate, and a floating gate structure comprising at least a first region having a first electron energy level
7898850 Memory cells, electronic systems, methods of forming memory cells, and methods of programming me March 1, 2011
Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material
7781818 Semiconductor constructions containing tubular capacitor storage nodes, and retaining structures August 24, 2010
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
7736987 Methods of forming semiconductor constructions June 15, 2010
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
7687844 Semiconductor constructions March 30, 2010
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containin
7683413 Double sided container capacitor for a semiconductor device March 23, 2010
A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are formed on the first cell
7666797 Methods for forming semiconductor constructions, and methods for selectively etching silicon nit February 23, 2010
The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semicond
7535695 DRAM cells and electronic systems May 19, 2009
The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride.
7498629 Stud electrode and process for making same March 3, 2009
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also
7495277 Memory circuitry February 24, 2009
The invention includes memory circuitry. In one implementation, memory circuitry includes a memory array comprising a plurality of memory cell capacitors. Individual of the capacitors include a storage node electrode, a capacitor dielectric region, and a cell electrode. The cell elec
7449391 Methods of forming plurality of capacitor devices November 11, 2008
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
7420238 Semiconductor constructions September 2, 2008
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
7419913 Methods of forming openings into dielectric material September 2, 2008
This invention includes methods of forming openings into dielectric material. In one implementation, an opening is partially etched through dielectric material, with such opening comprising a lowest point and opposing sidewalls of the dielectric material. At least respective portions
7414297 Capacitor constructions August 19, 2008
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across
7372094 Semiconductor constructions May 13, 2008
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containin
7274061 Capacitor constructions September 25, 2007
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across
7274059 Capacitor constructions September 25, 2007
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across
7271072 Stud electrode and process for making same September 18, 2007
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also
7271051 Methods of forming a plurality of capacitor devices September 18, 2007
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
7253102 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv August 7, 2007
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor
7230292 Stud electrode and process for making same June 12, 2007
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also
7226845 Semiconductor constructions, and methods of forming capacitor devices June 5, 2007
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
7141847 DRAM constructions, memory arrays and semiconductor constructions November 28, 2006
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containin
7126182 Memory circuitry October 24, 2006
The invention includes memory circuitry. In one implementation, memory circuitry includes a memory array comprising a plurality of memory cell capacitors. Individual of the capacitors include a storage node electrode, a capacitor dielectric region, and a cell electrode. The cell elec
7125781 Methods of forming capacitor devices October 24, 2006
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A
7105403 Double sided container capacitor for a semiconductor device and method for forming same September 12, 2006
A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are formed on the first cell
7092234 DRAM cells and electronic systems August 15, 2006
The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride.
7091101 Method of forming a device August 15, 2006
A method of forming a device is disclosed. The method includes forming a capacitor, and forming the capacitor includes forming a first electrode. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of transition
7041570 Method of forming a capacitor May 9, 2006
A method of forming a capacitor is disclosed. The method includes forming a first substrate layer, and forming a first electrode on the first substrate layer. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting
7033884 Methods of forming capacitor constructions April 25, 2006
The invention includes capacitor constructions comprising a layer of aluminum oxide between a high-k dielectric material and a layer comprising titanium and nitrogen. The layer comprising titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride.
7026222 Method of forming a capacitor April 11, 2006
A method of forming a capacitor is disclosed. The method includes forming a substrate assembly, and forming a first electrode on the substrate assembly. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of tr
7023043 Top electrode in a strongly oxidizing environment April 4, 2006
An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further compris
6964901 Methods of forming rugged electrically conductive surfaces and layers November 15, 2005
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across
6960513 Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and me November 1, 2005
A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second electrodes. The present invention
6919257 Method of forming a capacitor July 19, 2005
A method of forming a capacitor is disclosed. The method includes forming a first electrode having a non-smooth surface and selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a second
6881642 Method of forming a MIM capacitor with metal nitride electrode April 19, 2005
A method of forming an MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior t
6858894 Comprising agglomerates of one or more noble metals February 22, 2005
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containin
6812112 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv November 2, 2004
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor depo
6806187 Electrical contact for high dielectric constant capacitors and method for fabricating the same October 19, 2004
An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are re
6773984 Methods of depositing noble metals and methods of forming capacitor constructions August 10, 2004
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containin
6764943 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv July 20, 2004
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor depo
6753618 MIM capacitor with metal nitride electrode materials and method of formation June 22, 2004
An MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric
6696718 Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and me February 24, 2004
A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second electrodes. The present invention
6689657 Method of forming a capacitor February 10, 2004
A method of forming a capacitor. The method includes forming a substrate assembly having an interconnect recessed therein, and forming a first electrode on the interconnect. The first electrode includes a material selected from the group consisting of transition metals, conductive ox
6682969 Top electrode in a strongly oxidizing environment January 27, 2004
An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further compris
6580114 Processing methods of forming a capacitor, and capacitor construction June 17, 2003
Capacitors and methods of forming capacitors are described. According to one implementation, a capacitor opening is formed over a substrate node location. Electrically conductive material is subsequently formed within the capacitor opening and makes an electrical connection with the node
6482736 Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv November 19, 2002
An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor depo
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