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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Goto; Katsuhiko
Address:
Itami, JP
No. of patents:
16
Patents:












Patent Number Title Of Patent Date Issued
6037189 Integrated waveguide device and method of fabricating the integrated waveguide device March 14, 2000
A method of fabricating an integrated waveguide device includes forming a ridge having a width that varies in a tapered shape along the [011] direction on a semiconductor substrate and growing a laminated layer structure including a light waveguide layer where the width varies in a t
5991322 Semiconductor optical device November 23, 1999
A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second
5684823 Method of fabricating a diffraction grating and a distributed feedback semiconductor laser incor November 4, 1997
A quantum wire structure includes a substrate of a first semiconductor having a surface and a first band gap energy; a layer of a second semiconductor having a second band gap energy and including second semiconductor elements disposed on the surface of the substrate spaced apart in
5671242 Strained quantum well structure September 23, 1997
A semiconductor device includes a substrate having a lattice constant and a stress compensation strained quantum well layer including compressively strained layers having a lattice constant larger than the lattice constant of the substrate and tensively strained layers having a lattice c
5621564 Semiconductor optical modulator April 15, 1997
A semiconductor optical modulator includes an active region including a multi quantum well structure. Thereby, it is possible to absorb laser light having two polarization wave modes to a high degree as well as increase the number of quantum wells without fracturing the crystal, ther
5544188 Semiconductor laser device having a high emission efficiency and a large modulation bandwidth August 6, 1996
A semiconductor laser device includes an active layer having a multiquantum well (MQW) structure including well layers and barrier layers, each well layer being disposed between a pair of barrier layers. In this structure, the barrier layers have respective band gap energies that gradual
5459747 Semiconductor optical devices October 17, 1995
A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second
5442649 Semiconductor laser device August 15, 1995
A semiconductor laser includes a semiconductor substrate of a first conductivity type, a gain guiding structure comprising of a first conductivity type, a lower cladding layer disposed on the substrate, an active layer disposed on the lower cladding layer and having a light emitting
5157680 Integrated semiconductor laser October 20, 1992
An integrated semiconductor laser including at least two active regions, each active region oscillating at a respective, different wavelength, the integrated semiconductor laser including a common semiconductor substrate of a first conductivity type; a semiconductor first cladding layer
5124279 Integrated semiconductor laser producing light of different wavelengths at respective active reg June 23, 1992
A method of making an integrated semiconductor laser on a common substrate including at least two active regions, each active region oscillating at a respective, different wavelength, including producing a precursor laser structure by successively growing on a semiconductor substrate a f
5107514 Semiconductor optical element April 21, 1992
A semiconductor optical element includes a quantum well structure having a crystalline well layer of (Al.sub.x Ga.sub.1-x).sub.1-z In.sub.z P.sub.y As.sub.1-y (O.ltoreq.x<1, O.ltoreq.y<1, O<z<1) having a lattice constant that matches crystalline InP and two barrier layers of
4957879 Method of making a semiconductor laser using superlattice disordering September 18, 1990
A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow
4888781 Semiconductor laser December 19, 1989
A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow
4847217 Method for making a semiconductor device July 11, 1989
A method for producing a semiconductor device includes producing a first mask film on a main surface of a compound semiconductor wafer, patterning the first mask film and producing a second mask film so as to cover at least an end portion of the first mask film, diffusing impurities into
4809289 Semiconductor laser device February 28, 1989
A semiconductor laser device comprises a semi-insulating substrate and at least two kinds of the thin compound semiconductor layers having different width of band gap, which are alternately superimposed on the seim-insulating substrate to form a multiquantum well layer, wherein disor
4788161 Method of producing an end surface light emission type semiconductor device November 29, 1988
A method of producing an end surface light emmision type semiconductor device comprising: a process of producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate; a process of forming a stripe groove of a predetermined depth reaching the










 
 
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