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Inventor:
Goto; Hiroshi
Address:
Yokohama, JP
No. of patents:
16
Patents:












Patent Number Title Of Patent Date Issued
RE34400 Method for fabricating isolation region in semiconductor devices October 5, 1993
A method for fabricating an isolation region in a semiconductor substrate that produces neither a "bird's beak" nor a "bird's head". A smooth substrate surface is provided, which is preferable for multi-layered wiring. The packing density of devices in a bipolar IC circuit can be inc
6034715 Video telephone for the real-time exchange of image and other data through a digital communicati March 7, 2000
A video telephone to be connected to the ISDN is a unitary structure comprising a communication controller for controlling communication of digital data, such as voice signal, image signal and facsimile/camera control signal, a dial or key panel unit, a telephone controller for contr
5907745 Image forming apparatus having arrangement of sheet support members and air ducts May 25, 1999
An image forming apparatus for forming an image on a recording material includes an image bearing member; and optical mechanism for projecting light corresponding to image information onto the image bearing member; a developer for developing a latent image formed on the image bearing mem
5587735 Video telephone December 24, 1996
A video telephone to be connected to the ISDN is a unitary structure comprising a communication controller for controlling communication of digital data, such as voice signal, image signal and facsimile/camera control signal, a dial or key panel unit, a telephone controller for contr
5400068 Video telephone March 21, 1995
A video telephone to be connected to the ISDN is a unitary structure comprising a communication controller for controlling communication of digital data, such as voice signal, image signal and facsimile/camera control signal, a dial or key panel unit, a telephone controller for contr
5068123 Process for producing recording medium and apparatus therefor November 26, 1991
A process for producing a recording medium comprising a substrate and a plurality of image forming elements disposed thereon, which comprises the steps of: applying a binder onto the substrate to form thereon a binder layer; disposing the image forming elements on the binder layer; and
4970716 Protocol integrating videotex communication system November 13, 1990
A protocol integrating videotex communication system includes a group of data base centers conforming to various presentation level protocol syntaxes (PLPS) of a videotex, a plurality of subscriber's terminals conforming to the PLPS of to the group of data base centers, and a device
4952521 Process for fabricating a semiconductor device with selective growth of a metal silicide August 28, 1990
A metal or metal silicide layer (37) is selectively grown on a nucleating layer (28) with a predetermined pattern on an insulating layer and on a substrate below an opening in an insulating layer, to form a metal or metal silicide electrode in contact with the substrate external base (36
4906593 Method of producing a contact plug March 6, 1990
A method of producing a semiconductor device comprising the steps of: forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line; forming semiconductor material (silicon) in the window; substituting the material
4698127 Process for fabricating a self-aligned bipolar transistor October 6, 1987
Using a single mask pattern on a semiconductor substrate, a doped base contact region adjacent to the surface of the substrate, a buried insulating region below the base contact region, and an insulating layer on the base contact region, and optionally, a metal or metal silicide base
4654113 Process for fabricating a semiconductor device March 31, 1987
A method of forming an insulating layer having a planar surf on a lower wiring layer having given patterns steps at the shoulders of the patterns. On a lower wiring layer, a lower insulating layer is formed and a heat resistive material is coated over the lower insulative layer to form a
4611386 Method of producing a semiconductor device September 16, 1986
A method of producing a semiconductor device having an isolation region between elements. Each element is surrounded by a field oxide film, and is isolated by the dielectric isolation structure of a groove filled with an insulating material. The field oxide film is formed by selectively
4590666 Method for producing a bipolar transistor having a reduced base region May 27, 1986
A method of producing a bipolar transistor which includes forming a base region, forming a high-melting-point metal layer of a base electrode on the base region, forming a first insulating layer on the metal layer, and selectively etching the first insulating layer and the metal layer to
4509249 Method for fabricating isolation region in semiconductor devices April 9, 1985
A method for fabricating an isolation region in a semiconductor substrate that produces neither a "bird's beak" nor a "bird's head". A smooth substrate surface is provided, which is preferable for multi-layered wiring. The packing density of devices in a bipolar IC circuit can be inc
4465528 Method of producing a walled emitter semiconductor device August 14, 1984
A method of producing a bipolar type semiconductor device including the steps of: forming an insulating layer, consisting of an oxide film of the semiconductor substrate or a separate layer on a silicon semiconductor substrate or layer having a first conductivity type; forming a poly
4377031 Method of making Schottky barrier diode by selective beam-crystallized polycrystalline/amorphous March 22, 1983
Generally, a complicated process is required in manufacturing a semiconductor device containing a Schottky barrier diode and a polycrystalline silicon layer which prevents excessive reaction of the aluminum electrode and silicon material involved. Because of the inability of the alum










 
 
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