| Patent Number |
Title Of Patent |
Date Issued |
| 5069701 |
Preparation of fluoride glass by chemical vapor deposition |
December 3, 1991 |
| A fluoride glass is prepared by depositing a solid including a metal fluoride on a heated substrate, from a gaseous mixture of a nonmetallo-organic compound, carbon dioxide, and a source of carbonyl fluoride. The nonmetallo-organic compound contains the metallic cation of the metal f |
| 5032374 |
Preparation of metal sulfides |
July 16, 1991 |
| Metal sulfides are prepared by reacting a compound of the metal and an oxygen-containing anion, with a source of carbonyl sulfide. The resulting metal sulfide is not contaminated by hydrogen, as in the form of hydroxides, and is suitable for use in photoluminescence and electrolumine |
| 4869893 |
Preparation of high purity compounds of sulfur, selenium, and tellurium |
September 26, 1989 |
| A method for preparing compounds of sulfur, selenium, and tellurium includes the formation of the compound from the elements in a closed environment which excludes oxygen, and then the purification of the compound by contacting it with carbon or carbon monoxide. Oxygen, the principal |
| 4857293 |
Process for the preparation of ultrapure heavy metal fluorides |
August 15, 1989 |
| This invention provides a method for the preparation of ultrapure active metal fluorides of increased purity from their metal oxides by reacting an active metal with a predetermined amount of HF(aq) to form a solid reaction product which is dried under controlled heating to form a hy |
| 4839328 |
Catalyst material and a process for its preparation |
June 13, 1989 |
| A catalyst material having a catalyst metal supported on a substrate, wherein the substrate has at least two types of surface atomic sites at which the catalyst metal can reside, and the catalyst metal resides primarily in one of those types of sites. In one catalyst material having |
| 4756901 |
Purification of (Nb.sub.1-x Ta.sub.x).sub.2 O.sub.5 |
July 12, 1988 |
| (Nb.sub.1-x Ta.sub.x).sub.2 O.sub.5 ("NTO") is purified of undesirable impurity elements present in small amounts by contacting the NTO in finely divided form to an extraction phase containing chloride, bromide, or iodide ions at a temperature whereat the ions react to remove the imp |
| 4752454 |
Process for the preparation of ultrapure active metal fluorides |
June 21, 1988 |
| This invention provides a method for the preparation of ultrapure active metal fluorides of increased purity from their metal oxides by reacting an active metal with a predetermined amount of HF(aq) to form a solid reaction product which is dried under controlled heating to form a hy |
| 4724038 |
Process for preparing single crystal binary metal oxides of improved purity |
February 9, 1988 |
| A method is disclosed for the growth of single crystals of a binary metal oxides of the formula ABO.sub.3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO.sub.3 |
| 4600442 |
Process for the removal of impurities from optical component materials |
July 15, 1986 |
| A process is disclosed for the removal of water and water derived impurities, e.g. OH.sup.-, substitutionally or interstitially incorporated in the structure of crystalline and amorphous materials, more specifically, in metal oxides, e.g. fused silica or aluminum oxide, wherein the m |
| 4465656 |
Process for preparation of water-free oxide material |
August 14, 1984 |
| The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength |
| 4462974 |
Process for preparation of water-free oxide material |
July 31, 1984 |
| The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength |
| 4462970 |
Process for preparation of water-free oxychloride material |
July 31, 1984 |
| The specification discloses a process for forming a water-free rare earth oxychloride powder by exposing a water-containing rare earth oxide powder to a reactive atmosphere of chlorine and oxygen at 1000.degree. C. for 24 hours to remove water impurities from the oxide powder and to |
| 4429009 |
Process for surface conversion of vitreous silica to cristobalite |
January 31, 1984 |
| The specification discloses a process for converting the surface layer of a body of vitreous silica to the more stable crystalline form of silica known as cristobalite. The surface of the body of vitreous silica is exposed to a gas phase reactive atmosphere comprising atomic iodine at a |
| 4409260 |
Process for low-temperature surface layer oxidation of a semiconductor substrate |
October 11, 1983 |
| The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a temperature of about 750.degree. C. or lower in the presence of a chosen oxygen-containing |
